| Analog synaptic behavior of a silicon nitride memristor S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park ACS applied materials & interfaces 9 (46), 40420-40427, 2017 | 235 | 2017 |
| Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications C Mahata, H Algadi, J Lee, S Kim, T Lee Measurement 151, 107095, 2020 | 122 | 2020 |
| Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ... Nanoscale 11 (1), 237-245, 2019 | 108 | 2019 |
| Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications S Kim, S Jung, MH Kim, S Cho, BG Park Applied Physics Letters 106 (21), 2015 | 107 | 2015 |
| Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018 | 90 | 2018 |
| Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing M Ismail, U Chand, C Mahata, J Nebhen, S Kim Journal of Materials Science & Technology 96, 94-102, 2022 | 74 | 2022 |
| Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures S Kim, BG Park Applied Physics Letters 108 (21), 2016 | 71 | 2016 |
| Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application JH Ryu, C Mahata, S Kim Journal of Alloys and Compounds 850, 156675, 2021 | 70 | 2021 |
| Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems M Ismail, H Abbas, C Choi, S Kim Applied Surface Science 529, 147107, 2020 | 70 | 2020 |
| Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse M Ismail, C Mahata, S Kim Journal of Alloys and Compounds 892, 162141, 2022 | 67 | 2022 |
| Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application MK Rahmani, M Ismail, C Mahata, S Kim Results in Physics 18, 103325, 2020 | 67 | 2020 |
| Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems C Mahata, C Lee, Y An, MH Kim, S Bang, CS Kim, JH Ryu, S Kim, H Kim, ... Journal of Alloys and Compounds 826, 154434, 2020 | 67 | 2020 |
| Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device H Ryu, S Kim Nanomaterials 10 (11), 2159, 2020 | 63 | 2020 |
| Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode C Mahata, M Kang, S Kim Nanomaterials 10 (10), 2069, 2020 | 61 | 2020 |
| Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer M Ismail, H Abbas, C Choi, S Kim Journal of Alloys and Compounds 835, 155256, 2020 | 55 | 2020 |
| Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices S Kim, YF Chang, BG Park RSC Advances 7, 17882, 2017 | 55 | 2017 |
| Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ... ACS applied materials & interfaces 12 (30), 33908-33916, 2020 | 53 | 2020 |
| Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing JH Ryu, S Kim Chaos, Solitons & Fractals 140, 110236, 2020 | 52 | 2020 |
| Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ... Applied Surface Science 529, 147167, 2020 | 51 | 2020 |
| Zinc tin oxide synaptic device for neuromorphic engineering JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ... IEEE Access 8, 130678-130686, 2020 | 51 | 2020 |
Byung Gook ParkProfessor of Electrical Engineering, Seoul National University在 snu.ac.kr 的电子邮件经过验证
