Recent progress in 1D contacts for 2D‐material‐based devices MS Choi, N Ali, TD Ngo, H Choi, B Oh, H Yang, WJ Yoo Advanced Materials 34 (39), 2202408, 2022 | 35 | 2022 |
Metal–Insulator Transition Driven by Traps in 2D WSe2 Field‐Effect Transistor F Ali, N Ali, M Taqi, TD Ngo, M Lee, H Choi, WK Park, E Hwang, WJ Yoo Advanced Electronic Materials 8 (9), 2200046, 2022 | 13 | 2022 |
Contact resistivity in edge‐contacted graphene field effect transistors S Lee, H Choi, I Moon, H Shin, K Watanabe, T Taniguchi, WJ Yoo Advanced Electronic Materials 8 (5), 2101169, 2022 | 12 | 2022 |
Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs T Huynh, TD Ngo, H Choi, M Choi, W Lee, TD Nguyen, TT Tran, K Lee, ... ACS Applied Materials & Interfaces 16 (3), 3694-3702, 2024 | 4 | 2024 |
Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe2 Semiconductor Devices Z Wang, N Ali, F Ali, H Choi, H Shin, WJ Yoo ACS Applied Materials & Interfaces 14 (50), 55787-55794, 2022 | 2 | 2022 |
Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors F Ali, H Choi, N Ali, Y Hassan, TD Ngo, F Ahmed, WK Park, Z Sun, ... Advanced Electronic Materials, 2400071, 2024 | | 2024 |
Link between T-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus N Ali, B Singh, PK Srivastava, F Ali, M Lee, H Park, H Shin, K Lee, H Choi, ... ACS nano 18 (18), 11978-11987, 2024 | | 2024 |