| Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors Y Huang, Y Gu, S Mohan, A Dolocan, ND Ignacio, S Kutagulla, ... Advanced Functional Materials 34 (15), 2214250, 2024 | 23 | 2024 |
| Quantum conductance in vertical hexagonal boron nitride memristors with graphene-edge contacts J Xie, MN Patoary, MA Rahman Laskar, ND Ignacio, X Zhan, U Celano, ... Nano Letters 24 (8), 2473-2480, 2024 | 6 | 2024 |
| Air‐Stable Atomically Encapsulated Crystalline‐Crystalline Phase Transitions in In2Se3 ND Ignacio, J Fatheema, YR Jeon, D Akinwande Advanced Electronic Materials 10 (1), 2300457, 2024 | 3 | 2024 |
| Direct Metal-Free Growth and Dry Separation of Bilayer Graphene on Sapphire: Implications for Electronic Applications S Mohan, D Kireev, S Kutagulla, N Ignacio, Y Gu, H Celio, X Zhan, ... ACS Applied Nano Materials 6 (20), 19018-19028, 2023 | 2 | 2023 |
| Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems Y Lee, Y Huang, YF Chang, SJ Yang, ND Ignacio, S Kutagulla, S Mohan, ... ACS nano, 2024 | | 2024 |
