| High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling S Bangsaruntip, GM Cohen, A Majumdar, Y Zhang, SU Engelmann, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 602 | 2009 |
| and gate dielectrics on GaAs grown by atomic layer deposition MM Frank, GD Wilk, D Starodub, T Gustafsson, E Garfunkel, YJ Chabal, ... Applied Physics Letters 86 (15), 152904, 2005 | 410 | 2005 |
| Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges EP Gusev, V Narayanan, MM Frank IBM Journal of Research and Development 50 (4.5), 387-410, 2006 | 389 | 2006 |
| Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide NA Bojarczuk Jr, C Cabral Jr, EA Cartier, MM Frank, EP Gousev, S Guha, ... US Patent 7,242,055, 2007 | 315 | 2007 |
| Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ... Nature nanotechnology 8 (10), 748-754, 2013 | 285 | 2013 |
| Absence of magnetism in hafnium oxide films DW Abraham, MM Frank, S Guha Applied Physics Letters 87 (25), 252502, 2005 | 269 | 2005 |
| Metallic contact formation for molecular electronics: interactions between vapor-deposited metals and self-assembled monolayers of conjugated mono-and dithiols B De Boer, MM Frank, YJ Chabal, W Jiang, E Garfunkel, Z Bao Langmuir 20 (5), 1539-1542, 2004 | 252 | 2004 |
| High-/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length MH Khater, Z Zhang, J Cai, C Lavoie, C D'Emic, Q Yang, B Yang, ... IEEE Electron Device Letters 31 (4), 275-277, 2010 | 245 | 2010 |
| Germanium channel MOSFETs: Opportunities and challenges H Shang, MM Frank, EP Gusev, JO Chu, SW Bedell, KW Guarini, M Ieong IBM Journal of Research and Development 50 (4.5), 377-386, 2006 | 245 | 2006 |
| From atoms to crystallites: adsorption on oxide-supported metal particles (vol 2, pg 3723, 2000) M Frank, M Baumer PHYSICAL CHEMISTRY CHEMICAL PHYSICS 2 (18), 4265-4265, 2000 | 241* | 2000 |
| From atoms to crystallites: adsorption on oxide-supported metal particles M Frank, M Bäumer Physical Chemistry Chemical Physics 2 (17), 3723-3737, 2000 | 227 | 2000 |
| Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides MM Frank, YJ Chabal, GD Wilk Applied physics letters 82 (26), 4758-4760, 2003 | 203 | 2003 |
| Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon NV Nguyen, AV Davydov, D Chandler-Horowitz, MM Frank Applied Physics Letters 87 (19), 192903, 2005 | 187 | 2005 |
| Synthesis and characterization of conjugated mono-and dithiol oligomers and characterization of their self-assembled monolayers B De Boer, H Meng, DF Perepichka, J Zheng, MM Frank, YJ Chabal, ... Langmuir 19 (10), 4272-4284, 2003 | 179 | 2003 |
| Hafnium oxide gate dielectrics on sulfur-passivated germanium MM Frank, SJ Koester, M Copel, JA Ott, VK Paruchuri, H Shang, ... Applied physics letters 89 (11), 112905, 2006 | 175 | 2006 |
| Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon MM Frank, YJ Chabal, ML Green, A Delabie, B Brijs, GD Wilk, MY Ho, ... Applied physics letters 83 (4), 740-742, 2003 | 156 | 2003 |
| Interaction of rhodium with hydroxylated alumina model substrates J Libuda, M Frank, A Sandell, S Andersson, PA Brühwiler, M Bäumer, ... Surface science 384 (1-3), 106-119, 1997 | 142 | 1997 |
| Surface reactivity of Pd nanoparticles supported on polycrystalline substrates as compared to thin film model catalysts: infrared study of CO adsorption S Bertarione, D Scarano, A Zecchina, V Johánek, J Hoffmann, ... The Journal of Physical Chemistry B 108 (11), 3603-3613, 2004 | 130 | 2004 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 126 | 2011 |
| Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling E Cartier, A Kerber, T Ando, MM Frank, K Choi, S Krishnan, B Linder, ... 2011 International Electron Devices Meeting, 18.4. 1-18.4. 4, 2011 | 122 | 2011 |
