State of the art of high temperature power electronics C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ... Materials Science and Engineering: B 176 (4), 283-288, 2011 | 443 | 2011 |
Silica films on silicon carbide: a review of electrical properties and device applications C Raynaud Journal of Non-Crystalline Solids 280 (1-3), 1-31, 2001 | 192 | 2001 |
Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices C Raynaud, D Tournier, H Morel, D Planson Diamond and related materials 19 (1), 1-6, 2010 | 140 | 2010 |
Thermal stability of silicon carbide power diodes C Buttay, C Raynaud, H Morel, G Civrac, ML Locatelli, F Morel IEEE Transactions on electron devices 59 (3), 761-769, 2012 | 104 | 2012 |
Die attach of power devices using silver sintering-bonding process optimization and characterization C Buttay, A Masson, J Li, MC Johnson, M Lazar, C Raynaud, H Morel HiTEN 2011, 1-7, 2011 | 87 | 2011 |
Barrier height determination of SiC Schottky diodes by capacitance and current–voltage measurements C Raynaud, K Isoird, M Lazar, CM Johnson, N Wright Journal of applied physics 91 (12), 9841-9847, 2002 | 71 | 2002 |
Deep SiC etching with RIE M Lazar, H Vang, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ... Superlattices and microstructures 40 (4-6), 388-392, 2006 | 70 | 2006 |
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy NS Savkina, AA Lebedev, DV Davydov, AM Strel'Chuk, AS Tregubova, ... Materials Science and Engineering: B 77 (1), 50-54, 2000 | 67 | 2000 |
Ni–Al ohmic contact to p-type 4H-SiC H Vang, M Lazar, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ... Superlattices and microstructures 40 (4-6), 626-631, 2006 | 53 | 2006 |
Electrical characterization of instabilities in 6H silicon carbide metal‐oxide‐semiconductor capacitors C Raynaud, JL Autran, B Balland, G Guillot, C Jaussaud, T Billon Journal of applied physics 76 (2), 993-997, 1994 | 43 | 1994 |
A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase T Abi-Tannous, M Soueidan, G Ferro, M Lazar, C Raynaud, B Toury, ... IEEE Transactions on Electron Devices 63 (6), 2462-2468, 2016 | 33 | 2016 |
High temperature characterization of SiC-JFET and modelling R Mousa, D Planson, H Morel, C Raynaud 2007 European Conference on Power Electronics and Applications, 1-10, 2007 | 33 | 2007 |
Modeling and high temperature characterization of SiC-JFET R Mousa, D Planson, H Morel, B Allard, C Raynaud 2008 IEEE Power Electronics Specialists Conference, 3111-3117, 2008 | 32 | 2008 |
Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts T Zhang, C Raynaud, D Planson The European Physical Journal Applied Physics 85 (1), 10102, 2019 | 31 | 2019 |
High-temperature die-attaches for SiC power devices A Masson, C Buttay, H Morel, C Raynaud, S Hascoët, L Gremillard Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 31 | 2011 |
Experimental determination of impact ionization coefficients in 4H-SiC DM Nguyen, C Raynaud, N Dheilly, M Lazar, D Tournier, P Brosselard, ... Diamond and related materials 20 (3), 395-397, 2011 | 31 | 2011 |
Optical triggering of SiC thyristors using UV LEDs N Dheilly, G Pâques, S Scharnholz, P Bevilacqua, C Raynaud, ... Electronics letters 47 (7), 459-460, 2011 | 30 | 2011 |
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC. R Nipoti, F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, M Lazar, ... MRS Online Proceedings Library (OPL) 742, K6. 2, 2002 | 28 | 2002 |
Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of -type layers M Lazar, C Raynaud, D Planson, JP Chante, ML Locatelli, L Ottaviani, ... Journal of applied physics 94 (5), 2992-2998, 2003 | 27 | 2003 |
A 4H-SiC high-power-density VJFET as controlled current limiter D Tournier, P Godignon, J Montserrat, D Planson, C Raynaud, JP Chante, ... IEEE Transactions on Industry Applications 39 (5), 1508-1513, 2003 | 26 | 2003 |