| Enriching 28Si beyond 99.9998% for semiconductor quantum computing KJ Dwyer, JM Pomeroy, DS Simons, KL Steffens, JW Lau Journal of Physics D: Applied Physics 47 (34), 345105, 2014 | 31 | 2014 |
| STM-induced desorption and lithographic patterning of Cl–Si (100)-(2× 1) KJ Dwyer, M Dreyer, RE Butera The Journal of Physical Chemistry A 123 (50), 10793-10803, 2019 | 28 | 2019 |
| B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100) KJ Dwyer, S Baek, A Farzaneh, M Dreyer, JR Williams, RE Butera ACS Applied Materials & Interfaces 13 (34), 41275-41286, 2021 | 19 | 2021 |
| AlCl3-Dosed Si(100)-2 × 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al MS Radue, S Baek, A Farzaneh, KJ Dwyer, Q Campbell, AD Baczewski, ... The Journal of Physical Chemistry C 125 (21), 11336-11347, 2021 | 16 | 2021 |
| Temperature-dependent 29Si incorporation during deposition of highly enriched 28Si films KJ Dwyer, HS Kim, DS Simons, JM Pomeroy Physical Review Materials 1 (064603), 2017 | 12 | 2017 |
| Reaction of Hydrazine with Solution-and Vacuum-Prepared Selectively Terminated Si (100) Surfaces: Pathways to the Formation of Direct Si–N Bonds D Silva-Quinones, C He, KJ Dwyer, RE Butera, GT Wang, AV Teplyakov Langmuir 36 (43), 12866-12876, 2020 | 11 | 2020 |
| The stability of Cl-, Br-, and I-passivated Si (100)-(2× 1) in ambient environments for atomically-precise pattern preservation E Frederick, KJ Dwyer, GT Wang, S Misra, RE Butera Journal of Physics: Condensed Matter 33 (44), 444001, 2021 | 9 | 2021 |
| 99.996% 12C films isotopically enriched and deposited in situ KJ Dwyer, JM Pomeroy, DS Simons Applied Physics Letters 102 (25), 2013 | 4 | 2013 |
| In Situ Enrichment and Epitaxial Growth of 28Si Films via Ion Beam Deposition KJ Dwyer University of Maryland, College Park, 2017 | | 2017 |
Josh PomeroyNational Institute of Standards and Technology在 nist.gov 的电子邮件经过验证
Josh PomeroyNational Institute of Standards and Technology在 nist.gov 的电子邮件经过验证