| GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 493 | 2008 |
| Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ... Applied Physics Letters 94 (16), 2009 | 318 | 2009 |
| Observation of a C- Core Exciton in Diamond JF Morar, FJ Himpsel, G Hollinger, G Hughes, JL Jordan Physical review letters 54 (17), 1960, 1985 | 251 | 1985 |
| C 1s excitation studies of diamond (111). I. Surface core levels JF Morar, FJ Himpsel, G Hollinger, JL Jordan, G Hughes, FR McFeely Physical Review B 33 (2), 1340, 1986 | 250 | 1986 |
| Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ... Journal of Applied Physics 120 (12), 2016 | 175 | 2016 |
| A dose-ranging study of the oral direct thrombin inhibitor, ximelagatran, and its subcutaneous form, melagatran, compared with dalteparin in the prophylaxis of thromboembolism … BI Eriksson, AC Arfwidsson, L Frison, UG Eriksson, A Bylock, P Kälebo, ... Thrombosis and haemostasis 87 (02), 231-237, 2002 | 174 | 2002 |
| A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ... Journal of Applied Physics 109 (2), 2011 | 171 | 2011 |
| An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge (111) and Ge (100) surfaces T Deegan, G Hughes Applied surface science 123, 66-70, 1998 | 156 | 1998 |
| C 1s excitation studies of diamond (111). II. Unoccupied surface states JF Morar, FJ Himpsel, G Hollinger, JL Jordon, G Hughes, FR McFeely Physical Review B 33 (2), 1346, 1986 | 148 | 1986 |
| Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 91 (16), 2007 | 127 | 2007 |
| Si (111) surface oxidation: O 1s core-level study using synchrotron radiation G Hollinger, JF Morar, FJ Himpsel, G Hughes, JL Jordan Surface Science 168 (1-3), 609-616, 1986 | 112 | 1986 |
| Optimisation of the ammonium sulphide (NH4) 2S passivation process on In0. 53Ga0. 47As B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, ... Applied surface science 257 (9), 4082-4090, 2011 | 99 | 2011 |
| Photoelectron core-level spectroscopy and scanning-tunneling-microscopy study of the sulfur-treated GaAs (100) surface P Moriarty, B Murphy, L Roberts, AA Cafolla, G Hughes, L Koenders, ... Physical Review B 50 (19), 14237, 1994 | 99 | 1994 |
| Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission B Brennan, G Hughes Journal of Applied Physics 108 (5), 2010 | 98 | 2010 |
| Structure and bonding at the CaF2/Si (111) interface FJ Himpsel, FU Hillebrecht, G Hughes, JL Jordan, UO Karlsson, ... Applied physics letters 48 (9), 596-598, 1986 | 88 | 1986 |
| Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ... Journal of Applied Physics 104 (6), 2008 | 83 | 2008 |
| Structural and tribological properties of the plasma nitrided Ti-alloy biomaterials: Influence of the treatment temperature M Rahman, I Reid, P Duggan, DP Dowling, G Hughes, MSJ Hashmi Surface and Coatings Technology 201 (9-11), 4865-4872, 2007 | 83 | 2007 |
| Indium stability on InGaAs during atomic H surface cleaning FS Aguirre-Tostado, M Milojevic, CL Hinkle, EM Vogel, RM Wallace, ... Applied Physics Letters 92 (17), 2008 | 74 | 2008 |
| In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ... Applied Physics Letters 92 (2), 2008 | 72 | 2008 |
| Sb/GaAs (110) interface: A reevaluation F Schäffler, R Ludeke, A Taleb-Ibrahimi, G Hughes, D Rieger Physical Review B 36 (2), 1328, 1987 | 71 | 1987 |
pk hurleyTyndall National Institute, University College Cork在 tyndall.ie 的电子邮件经过验证
