NOx gas sensors based on layer-transferred n-MoS2/p-GaN heterojunction at room temperature: study of UV light illuminations and humidity M Reddeppa, BG Park, G Murali, SH Choi, ND Chinh, D Kim, W Yang, ... Sensors and Actuators B: Chemical 308, 127700, 2020 | 102 | 2020 |
H2, H2S gas sensing properties of rGO/GaN nanorods at room temperature: Effect of UV illumination M Reddeppa, BG Park, MD Kim, KR Peta, ND Chinh, D Kim, SG Kim, ... Sensors and Actuators B: Chemical 264, 353-362, 2018 | 83 | 2018 |
Interaction activated interfacial charge transfer in 2D g-C3N4/GaN nanorods heterostructure for self-powered UV photodetector and room temperature NO2 gas sensor at ppb level M Reddeppa, NT KimPhung, G Murali, KS Pasupuleti, BG Park, I In, ... Sensors and Actuators B: Chemical 329, 129175, 2021 | 81 | 2021 |
Ag nanowire-plasmonic-assisted charge separation in hybrid heterojunctions of Ppy-PEDOT: PSS/GaN nanorods for enhanced UV photodetection KS Pasupuleti, M Reddeppa, BG Park, KR Peta, JE Oh, SG Kim, MD Kim ACS Applied Materials & Interfaces 12 (48), 54181-54190, 2020 | 52 | 2020 |
DNA-CTMA functionalized GaN surfaces for NO2 gas sensor at room temperature under UV illumination M Reddeppa, SB Mitta, BG Park, SG Kim, SH Park, MD Kim Organic Electronics 65, 334-340, 2019 | 46 | 2019 |
Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon BG Park, RS Kumar, ML Moon, MD Kim, TW Kang, WC Yang, SG Kim Journal of Crystal Growth 425, 149-153, 2015 | 41 | 2015 |
Solution-processed Au@ rGO/GaN nanorods hybrid-structure for self-powered UV, visible photodetector and CO gas sensors M Reddeppa, SB Mitta, T Chandrakalavathi, BG Park, G Murali, ... Current Applied Physics 19 (8), 938-945, 2019 | 40 | 2019 |
UV-light enhanced CO gas sensors based on InGaN nanorods decorated with p-Phenylenediamine-graphene oxide composite M Reddeppa, T Chandrakalavathi, BG Park, G Murali, R Siranjeevi, ... Sensors and Actuators B: Chemical 307, 127649, 2020 | 38 | 2020 |
A novel low-temperature resistive NO gas sensor based on InGaN/GaN multi-quantum well-embedded p–i–n GaN nanorods M Reddeppa, BG Park, ND Chinh, D Kim, JE Oh, TG Kim, MD Kim Dalton Transactions 48 (4), 1367-1375, 2019 | 31 | 2019 |
Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode KR Peta, BG Park, ST Lee, MD Kim, JE Oh, TG Kim, VR Reddy Thin solid films 534, 603-608, 2013 | 31 | 2013 |
Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si (1 1 1) Schottky diode KR Peta, BG Park, ST Lee, MD Kim, JE Oh Microelectronic engineering 93, 100-104, 2012 | 30 | 2012 |
Efficient Charge Separation in Polypyrrole/GaN‐Nanorod‐Based Hybrid Heterojunctions for High‐Performance Self‐Powered UV Photodetection KS Pasupuleti, M Reddeppa, BG Park, JE Oh, SG Kim, MD Kim physica status solidi (RRL)–Rapid Research Letters 15 (12), 2000518, 2021 | 28 | 2021 |
Low operating temperature NO gas sensors based hydrogen peroxide treated GaN nanorods M Reddeppa, TKP Nguyen, BG Park, SG Kim, MD Kim Physica E: Low-dimensional Systems and Nanostructures 116, 113725, 2020 | 27 | 2020 |
Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector M Reddeppa, BG Park, KS Pasupuleti, DJ Nam, SG Kim, JE Oh, MD Kim Semiconductor Science and Technology 36 (3), 035010, 2021 | 19 | 2021 |
Improved Schottky behavior of GaN nanorods using hydrogen plasma treatment M Reddeppa, BG Park, ST Lee, NH Hai, MD Kim, JE Oh Current Applied Physics 17 (2), 192-196, 2017 | 16 | 2017 |
Domain matching epitaxy of GaN films on a novel langasite substrate: an in-plane epitaxial relationship analysis BG Park, RS Kumar, MD Kim, HD Cho, TW Kang, GN Panin, ... CrystEngComm 17 (24), 4455-4461, 2015 | 15 | 2015 |
Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods M Reddeppa, BG Park, S Majumder, YH Kim, JE Oh, SG Kim, D Kim, ... Nanotechnology 31 (47), 475201, 2020 | 14 | 2020 |
Photovoltaic Photodetectors Based on In2O3/InN Core–Shell Nanorods M Reddeppa, BG Park, DJ Nam, C Thota, NH Bak, KS Pasupuleti, YH Kim, ... ACS Applied Nano Materials 5 (5), 7418-7426, 2022 | 10 | 2022 |
Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer ST Lee, BG Park, MD Kim, JE Oh, SG Kim, YH Kim, WC Yang Current Applied Physics 12 (2), 385-388, 2012 | 10 | 2012 |
In, I.; Kim, M.-D M Reddeppa, NT KimPhung, G Murali, KS Pasupuleti, BG Park Interaction activated interfacial charge transfer in 2D gC 3, 2021 | 8 | 2021 |