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Debashis Panda
Debashis Panda
CV Raman Global Univ.; Univ. of Utah, USA; NUS, Singapore; NCTU, Taiwan; CGU, Taiwan, IIT Kharagpur
在 cgu-odisha.ac.in 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng
Thin Solid Films 531, 1-20, 2013
2822013
Status and prospects of ZnO-based resistive switching memory devices
FM Simanjuntak, D Panda, KH Wei, TY Tseng
Nanoscale research letters 11, 1-31, 2016
2342016
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
D Panda, TY Tseng
Journal of Materials Science 48, 6849-6877, 2013
2072013
A collective study on modeling and simulation of resistive random access memory
D Panda, PP Sahu, TY Tseng
Nanoscale research letters 13 (1), 8, 2018
1262018
Perovskite Oxides as Resistive Switching Memories: A Review
TYT D Panda
Ferroelectrics, 2014
1132014
Improving linearity by introducing Al in HfO2 as a memristor synapse device
S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng
Nanotechnology 30 (44), 445205, 2019
1072019
Forming-free bipolar resistive switching in nonstoichiometric ceria films
M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ...
Nanoscale research letters 9, 1-8, 2014
992014
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
D Panda, CY Huang, TY Tseng
Applied Physics Letters 100 (11), 2012
892012
Impacts of Co doping on ZnO transparent switching memory device characteristics
FM Simanjuntak, OK Prasad, D Panda, CA Lin, TL Tsai, KH Wei, ...
Applied Physics Letters 108 (18), 2016
842016
Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant
M Ismail, E Ahmed, AM Rana, F Hussain, I Talib, MY Nadeem, D Panda, ...
ACS applied materials & interfaces 8 (9), 6127-6136, 2016
832016
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
TYT Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai, Chun-An Lin ...
Journal of Materials Science 50 (21), 6961-6969, 2015
722015
Single-nanoparticle catalysis at single-turnover resolution
P Chen, W Xu, X Zhou, D Panda, A Kalininskiy
Chemical Physics Letters 470 (4-6), 151-157, 2009
712009
Nonvolatile Memristive Switching Characteristics of TiO $ _ {\bm 2} $ Films Embedded With Nickel Nanocrystals
D Panda, A Dhar, SK Ray
IEEE transactions on nanotechnology 11 (1), 51-55, 2011
682011
Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films
D Panda, A Dhar, SK Ray
Journal of Applied Physics 108 (10), 2010
652010
Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme
S Chandrasekaran, FM Simanjuntak, D Panda, TY Tseng
IEEE Transactions on Electron Devices 66 (11), 4722-4726, 2019
592019
Enhanced switching uniformity in AZO/ZnO1− x/ITO transparent resistive memory devices by bipolar double forming
FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng
Applied Physics Letters 107 (3), 2015
562015
Temperature induced complementary switching in titanium oxide resistive random access memory
D Panda, FM Simanjuntak, TY Tseng
AIP Advances 6 (7), 2016
382016
Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications
S Rajasekaran, FM Simanjuntak, D Panda, S Chandrasekaran, R Aluguri, ...
ACS Applied Electronic Materials 2 (10), 3131-3140, 2020
362020
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning
PY Jung, D Panda, S Chandrasekaran, S Rajasekaran, TY Tseng
IEEE Journal of the Electron Devices Society 8, 110-115, 2020
362020
Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor
B Pattanayak, FM Simanjuntak, D Panda, CC Yang, A Kumar, PA Le, ...
Scientific reports 9 (1), 16852, 2019
282019
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