GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 490 | 2008 |
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ... Applied Physics Letters 94 (16), 2009 | 315 | 2009 |
Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 91 (16), 2007 | 126 | 2007 |
Performance enhancement of n-channel inversion type InxGa1− xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer AM Sonnet, CL Hinkle, MN Jivani, RA Chapman, GP Pollack, RM Wallace, ... Applied Physics Letters 93 (12), 2008 | 70 | 2008 |
Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics CL Hinkle, AM Sonnet, M Milojevic, FS Aguirre-Tostado, HC Kim, J Kim, ... Applied Physics Letters 93 (11), 2008 | 65 | 2008 |
Impact of semiconductor and interface-state capacitance on metal/high-k/GaAs capacitance–voltage characteristics AM Sonnet, CL Hinkle, D Heh, G Bersuker, EM Vogel IEEE transactions on electron devices 57 (10), 2599-2606, 2010 | 57 | 2010 |
Extraction of the Effective Mobility ofMOSFETs CL Hinkle, AM Sonnet, RA Chapman, EM Vogel IEEE electron device letters 30 (4), 316-318, 2009 | 50 | 2009 |
Deposition of HfO2 on InAs by atomic-layer deposition D Wheeler, LE Wernersson, L Fröberg, C Thelander, A Mikkelsen, ... Microelectronic Engineering 86 (7-9), 1561-1563, 2009 | 45 | 2009 |
Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53) PK Hurley, E O'Connor, S Monaghan, R Long, A O'Mahony, IM Povey, ... ECS transactions 25 (6), 113, 2009 | 36 | 2009 |
Remote phonon and surface roughness limited universal electron mobility of In0. 53Ga0. 47As surface channel MOSFETs AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, K Thomas, A Gocalinska, ... Microelectronic engineering 88 (7), 1083-1086, 2011 | 34 | 2011 |
Surface studies of III-V materials: oxidation control and device implications C Hinkle, M Milojevic, A Sonnet, H Kim, J Kim, EM Vogel, RM Wallace ECS Transactions 19 (5), 387, 2009 | 32 | 2009 |
A stand-alone, physics-based, measurement-driven model and simulation tool for random telegraph signals originating from experimentally identified MOS gate-oxide defects M Nour, Z Çelik-Butler, A Sonnet, FC Hou, S Tang, G Mathur IEEE Transactions on Electron Devices 63 (4), 1428-1436, 2016 | 19 | 2016 |
On the calculation of effective electric field in In0. 53Ga0. 47As surface channel metal-oxide-semiconductor field-effect-transistors AM Sonnet, RV Galatage, PK Hurley, E Pelucchi, KK Thomas, ... Applied Physics Letters 98 (19), 2011 | 11 | 2011 |
High-k oxide growth on III-V surfaces: Chemical bonding and MOSFET performance C Hinkle, B Brennan, S McDonnell, M Milojevic, A Sonnet, D Zhernokletov, ... ECS Transactions 35 (3), 403, 2011 | 11 | 2011 |
Random telegraph signals originating from unrelaxed neutral oxygen vacancy centres in SiO2 M Nour, Z Çelik‐Butler, A Sonnet, FC Hou, S Tang Electronics Letters 51 (20), 1610-1611, 2015 | 9 | 2015 |
Analysis of Compressively Strained GaInAsP–InP Quantum-Wire Electro-Absorption Modulators AM Sonnet, MA Khayer, A Haque IEEE journal of quantum electronics 43 (12), 1198-1203, 2007 | 4 | 2007 |
A scalable random telegraph signal simulation based on experimentally—Identified gate oxide defects MA Nour, A Rouf, Z Çelik-Butler, FC Hou, S Tang, A Sonnet, G Mathur 2015 International Conference on Noise and Fluctuations (ICNF), 1-4, 2015 | 3 | 2015 |
Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs E Vogel, A Sonnet, R Galatage, M Milojevic, C Hinkle, RM Wallace ECS Transactions 28 (1), 209, 2010 | 3 | 2010 |
Fabrication and Characterization of III-V Metal-oxide-semiconductor AM Sonnet University of Texas at Dallas, 2010 | 2 | 2010 |
In-situ Studies of Atomic Layer Deposition Studies on High-Mobility Channel Materials M Milojevic, AM Sonnet, CL Hinkle, HC Kim, EM Vogel, J Kim, ... ECS Transactions 25 (4), 115, 2009 | 2 | 2009 |