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Weiyi Li
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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4as Gate Dielectric and Passivation Layer
Z Zhang, G Yu, X Zhang, X Deng, S Li, Y Fan, S Sun, L Song, S Tan, D Wu, ...
IEEE Transactions on Electron Devices 63 (2), 731-738, 2016
1112016
Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs
R Hao, W Li, K Fu, G Yu, L Song, J Yuan, J Li, X Deng, X Zhang, Q Zhou, ...
IEEE Electron Device Letters 38 (11), 1567-1570, 2017
982017
Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment
R Hao, K Fu, G Yu, W Li, J Yuan, L Song, Z Zhang, S Sun, X Li, Y Cai, ...
Applied Physics Letters 109 (15), 2016
892016
AlGaN/GaN MIS-HEMTs of Very-Low Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator
Z Zhang, W Li, K Fu, G Yu, X Zhang, Y Zhao, S Sun, L Song, X Deng, ...
IEEE Electron Device Letters 38 (2), 236-239, 2016
572016
6.2 W/Mm and record 33.8% PAE at 94 GHz from N-polar GaN deep recess MIS-HEMTs with ALD Ru gates
W Liu, B Romanczyk, M Guidry, N Hatui, C Wurm, W Li, P Shrestha, ...
IEEE Microwave and Wireless Components Letters 31 (6), 748-751, 2021
492021
N-polar GaN-on-Sapphire deep recess HEMTs with high W-band power density
B Romanczyk, W Li, M Guidry, N Hatui, A Krishna, C Wurm, S Keller, ...
IEEE Electron Device Letters 41 (11), 1633-1636, 2020
422020
Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid
Z Zhang, S Qin, K Fu, G Yu, W Li, X Zhang, S Sun, L Song, S Li, R Hao, ...
Applied Physics Express 9 (8), 084102, 2016
282016
Record RF power performance at 94 GHz from millimeter-wave N-polar GaN-on-sapphire deep-recess HEMTs
W Li, B Romanczyk, M Guidry, E Akso, N Hatui, C Wurm, W Liu, ...
IEEE Transactions on Electron Devices 70 (4), 2075-2080, 2023
222023
Bandgap engineering of monolayer MoS2 under strain: A DFT study
C Li, B Fan, W Li, L Wen, Y Liu, T Wang, K Sheng, Y Yin
Journal of the Korean Physical Society 66, 1789-1793, 2015
222015
Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN
SS Pasayat, N Hatui, W Li, C Gupta, S Nakamura, SP Denbaars, S Keller, ...
Applied Physics Letters 117 (6), 2020
212020
First demonstration of four-finger N-polar GaN HEMT exhibiting record 712-mW output power with 31.7% PAE at 94 GHz
E Akso, H Collins, C Clymore, W Li, M Guidry, B Romanczyk, C Wurm, ...
IEEE Microwave and Wireless Technology Letters 33 (6), 683-686, 2023
142023
Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE
C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ...
Journal of Applied Physics 131 (1), 2022
122022
First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel
W Li, S Pasayat, M Guidry, B Romanczyk, X Zheng, C Gupta, N Hatui, ...
Semiconductor Science and Technology 35 (7), 2020
112020
Record 94 GHz performance from N-polar GaN-on-sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE
W Li, B Romanczyk, E Akso, M Guidry, N Hatui, C Wurm, W Liu, ...
2022 International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2022
92022
Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability
W Li, Z Zhang, K Fu, G Yu, X Zhang, S Sun, L Song, R Hao, Y Fan, Y Cai, ...
Journal of Semiconductors 38 (7), 074001, 2017
92017
Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs
L Song, K Fu, Z Zhang, S Sun, W Li, G Yu, R Hao, Y Fan, W Shi, Y Cai, ...
AIP Advances 7 (12), 2017
52017
Record 1 W output power from a single N-polar GaN MISHEMT at 94 GHz
E Akso, C Clymore, W Liu, H Collins, B Romanczyk, W Li, N Hatui, ...
2023 Device Research Conference (DRC), 1-2, 2023
42023
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate
Z Zhang, L Song, W Li, K Fu, G Yu, X Zhang, Y Fan, X Deng, S Li, S Sun, ...
Solid-State Electronics 134, 39-45, 2017
42017
Fully relaxed, crack-free AlGaN with upto 50% Al composition grown on porous GaN pseudo-substrate
N Hatui, H Collins, E Kayede, SS Pasayat, W Li, S Keller, UK Mishra
Crystals 12 (7), 989, 2022
32022
Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films
H Collins, I Sayed, W Liu, SS Pasayat, AA Taylor, W Li, S Keller, ...
Applied Physics Letters 119 (4), 2021
32021
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