| Robust surface-potential-based compact model for GaN HEMT IC design S Khandelwal, C Yadav, S Agnihotri, YS Chauhan, A Curutchet, T Zimmer, ... IEEE Transactions on Electron Devices 60 (10), 3216-3222, 2013 | 139 | 2013 |
| Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs S Ghosh, A Dasgupta, S Khandelwal, S Agnihotri, YS Chauhan IEEE Transactions on Electron Devices 62 (2), 443-448, 2014 | 75 | 2014 |
| BSIM compact MOSFET models for SPICE simulation YS Chauhan, S Venugopalan, N Paydavosi, P Kushwaha, S Jandhyala, ... Proceedings of the 20th International Conference Mixed Design of Integrated …, 2013 | 39 | 2013 |
| Recent enhancements in BSIM6 bulk MOSFET model H Agarwal, S Venugopalan, MA Chalkiadaki, N Paydavosi, JP Duarte, ... 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 31 | 2013 |
| Modeling of temperature effects in a surface-potential based ASM-HEMT model S Ghosh, K Sharma, S Agnihotri, YS Chauhan, S Khandelwal, TA Fjeldly, ... 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 17 | 2014 |
| Modeling of trapping effects in GaN HEMTs S Agnihotri, S Ghosh, A Dasgupta, SA Ahsan, S Khandelwal, ... 2015 Annual IEEE India Conference (INDICON), 1-4, 2015 | 10 | 2015 |
| Significant enhancement of the stark effect in rippled monolayer blue phosphorus S Agnihotri, P Rastogi, YS Chauhan, A Agarwal, S Bhowmick The Journal of Physical Chemistry C 122 (9), 5171-5177, 2018 | 9 | 2018 |
| A surface potential based model for GaN HEMTs S Agnihotri, S Ghosh, A Dasgupta, YS Chauhan, S Khandelwal 2013 IEEE Asia Pacific Conference on Postgraduate Research in …, 2013 | 8 | 2013 |
| Enhanced ground bounce noise reduction in a low leakage 90nm 1-volt CMOS full adder cell M Pattanaik, S Agnihotri, M Varaprashad, TA Arasu 2010 International Symposium on Electronic System Design, 175-180, 2010 | 7 | 2010 |
| Interlayer decoupling in twisted bilayers of β-phosphorus and arsenic: A computational study S Agnihotri, M Kumar, YS Chauhan, A Agarwal, S Bhowmick FlatChem 16, 100112, 2019 | 5 | 2019 |
| Analysis and Modeling of Trapping Effects in RF GaN HEMTs under Pulsed Conditions S Ghosh, S Agnihotri, SA Ahsan, S Khandelwal, YS Chauhan IWPSD, India, 2015 | 1 | 2015 |
| Significant Performance Enhancement in strained channel GaAs Gate-All-Around (GAA) nanowire D Desai, N Lunagariya, H Vasara, P Chandra, S Agnihotri 2022 IEEE International Women in Engineering (WIE) Conference on Electrical …, 2022 | | 2022 |
| 2021 Index IEEE Transactions on Electron Devices Vol. 68 S Abdulazhanov, DK Abe, A Abhishek, A Abliz, EB Abubakirov, ... IEEE Transactions on Electron Devices 68 (12), 2021 | | 2021 |
| Ab-initio study of substitutional doping of Mg in In0.5Ga0.5N S Agnihotri, P Rastogi, YS Chauhan, A Agarwal 2017 IEEE 15th Student Conference on Research and Development (SCOReD), 178-182, 2017 | | 2017 |
| 2015 Index IEEE Transactions on Electron Devices Vol. 62 SA Abbasi, S Abbaszadeh, C Abbate, F Adamu-Lema, N Adhikari, ... IEEE Transactions on Electron Devices 62 (12), 4349, 2015 | | 2015 |
| DDD journal homepage: www. elsevier. com/locate/flatc S Agnihotri, M Kumar, YS Chauhan, A Agarwal | | |
| Impact of Gate Field Plate on DC, CV, and Transient Characteristics of Gallium Nitride HEMTs S Agnihotri, S Ghosh, S Khandelwal, YS Chauhan | | |
