SRAM radiation hardening through self-refresh operation and error correction MSM Siddiqui, S Ruchi, L Van Le, T Yoo, IJ Chang, TTH Kim IEEE Transactions on Device and Materials Reliability 20 (2), 468-474, 2020 | 19 | 2020 |
A 16-kb 9T Ultralow-Voltage SRAM With Column-Based Split Cell-VSS, Data-Aware Write-Assist, and Enhanced Read Sensing Margin in 28-nm FDSOI MSM Siddiqui, ZC Lee, TTH Kim IEEE Transactions on Very Large Scale Integration (VLSI) Systems 29 (10 …, 2021 | 10 | 2021 |
Integrated Circuit for Storing Data SM Siddiqui, S Sharad, H Vats, A Khanuja US Patent App. 14/828,364, 2016 | 10 | 2016 |
A 10T SRAM Cell with Enhanced Read Sensing Margin and Weak NMOS Keeper for Large Signal Sensing to Improve VDDMIN M Sultan M Siddiqui, SK Sharma, S Porwal, KB Pannalal, S Kumar 2019 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2019 | 9 | 2019 |
A low-power ternary content addressable memory (TCAM) with segmented and non-segmented matchlines M. Sultan M. Siddiqui, Sonika, GS Visweswaran TENCON 2008-2008 IEEE Region 10 Conference, 1-5, 2008 | 7 | 2008 |
A reaction-diffusion model to capture disparity selectivity in primary visual cortex MSM Siddiqui, B Bhaumik PloS one 6 (10), e24997, 2011 | 6 | 2011 |
Mitigating write disturbance in dual port 8T SRAM MSM Siddiqui, S Srivastav, DR Wanjul, M Suthar, S Kumar US Patent 10,510,402, 2019 | 5 | 2019 |
An 8T SRAM with BTI-Aware Stability Monitor and two-phase write operation for cell stability improvement in 28-nm FDSOI ZC Lee, MSM Siddiqui, ZH Kong, TTH Kim European Solid-State Circuits Conference, ESSCIRC Conference 2016: 42nd, 437-440, 2016 | 5 | 2016 |
Two phase write scheme to improve low voltage write ability in dedicated read and write port SRAM memories M. Sultan M. Siddiqui, Shailendra Sharad, Hemant Vats, Amit Khanuja US Patent 9,842,642, 2017 | 3 | 2017 |
A Study on Surface Slant Encoding in V1 MSM Siddiqui, B Bhaumik Frontiers in System Neuroscience, 7:87. doi: 10.3389/fnsys., 2013 | 3 | 2013 |
Reaction-diffusion based model to develop binocular simple cells in visual cortex along with cortical maps MSM Siddiqui, B Bhaumik The 2010 International Joint Conference on Neural Networks (IJCNN), 1-8, 2010 | 3 | 2010 |
An 8T SRAM With On-Chip Dynamic Reliability Management and Two-Phase Write Operation in 28-nm FDSOI ZC Lee, MSM Siddiqui, ZH Kong, TTH Kim IEEE Journal of Solid-State Circuits 54 (7), 2091-2101, 2019 | 2 | 2019 |
A 7-Nm dual port 8T SRAM with duplicated inter-port write data to mitigate write disturbance MSM Siddiqui, S Srivastav, DR Wanjul, M Suthar, S Kumar 2018 31st International Conference on VLSI Design and 2018 17th …, 2018 | 2 | 2018 |
A Radiation Hardened SRAM with Self-refresh and Compact Error Correction M. Sultan M. Siddiqui, R. Sharma, V. L. Le, T. Yoo, I.-J. Chang, T. Kim 15th International SoC Design Conference (ISOCC), 2018 | 2 | 2018 |
Enhanced read sensing margin for SRAM cell arrays MSM Siddiqui, SK Sharma, S Kumar, RK Shrivastava US Patent 11,532,352, 2022 | 1 | 2022 |
Enhanced read sensing margin and minimized VDD for SRAM cell arrays MSM Siddiqui, SK Sharma, S Porwal, KB Pannalal, S Kumar US Patent 11,062,766, 2021 | 1 | 2021 |
A 16kb Column-based Split Cell-VSS, Data-Aware Write-Assisted 9T Ultra-Low Voltage SRAM with Enhanced Read Sensing Margin in 28nm FDSOI MSM Siddiqui, ZC Lee, TTH Kim IEEE Asian Solid State Circuit Conference, ASSCC Conference 2017, 2017 | 1 | 2017 |
Two Phase Write Scheme to Improve Low Voltage Write-ability in Medium-Density SRAMs M Sultan, M Siddiqui, S Sharad, Y Sharma, A Khanuja 2015 28th International Conference on VLSI Design, 176-180, 2015 | 1 | 2015 |
MODELING DISPARITY AND SURFACE SLANT SELECTIVITY IN PRIMARY VISUAL CORTEX MSM SIDDIQUI Indian Institute of Technology Delhi, 2012 | | 2012 |
Interrelation between binocular disparity and other feature maps of V1 using Kohonen’s SOFM algorithm MSM Siddiqui, MK Garg, B Bhaumik BMC Neuroscience 11 (Suppl 1), P81, 2010 | | 2010 |