| Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015 | 65 | 2015 |
| Active defects in MOS devices on 4H-SiC: A critical review HA Moghadam, S Dimitrijev, J Han, D Haasmann Microelectronics Reliability 60, 1-9, 2016 | 63 | 2016 |
| Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC D Haasmann, S Dimitrijev Applied Physics Letters 103 (11), 2013 | 52 | 2013 |
| Gate-voltage independence of electron mobility in power AlGaN/GaN HEMTs A Aminbeidokhti, S Dimitrijev, AK Hanumanthappa, HA Moghadam, ... IEEE Transactions on Electron Devices 63 (3), 1013-1019, 2016 | 26 | 2016 |
| Optically Active Defects at the Interface BC Johnson, J Woerle, D Haasmann, CTK Lew, RA Parker, H Knowles, ... Physical Review Applied 12 (4), 044024, 2019 | 24 | 2019 |
| Quantified density of performance-degrading near-interface traps in SiC MOSFETs M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ... Scientific reports 12 (1), 4076, 2022 | 20 | 2022 |
| Direct measurement of active near-interface traps in the strong-accumulation region of 4H-SiC MOS capacitors P Pande, S Dimitrijev, D Haasmann, HA Moghadam, P Tanner, J Han IEEE Journal of the Electron Devices Society 6, 468-474, 2018 | 20 | 2018 |
| Electrical characterization of SiC MOS capacitors: A critical review P Pande, D Haasmann, J Han, HA Moghadam, P Tanner, S Dimitrijev Microelectronics Reliability 112, 113790, 2020 | 17 | 2020 |
| Near-interface trap model for the low temperature conductance signal in SiC MOS capacitors with nitrided gate oxides JR Nicholls, AM Vidarsson, D Haasmann, EÖ Sveinbjörnsson, ... IEEE Transactions on Electron Devices 67 (9), 3722-3728, 2020 | 16 | 2020 |
| Comparison of commercial planar and trench SiC MOSFETs by electrical characterization of performance-degrading near-interface traps M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ... IEEE Transactions on Electron Devices 69 (11), 6225-6230, 2022 | 15 | 2022 |
| Quantified density of active near interface oxide traps in 4H-SiC MOS capacitors HA Moghadam, S Dimitrijev, JS Han, A Aminbeidokhti, D Haasmann Materials Science Forum 858, 603-606, 2016 | 14 | 2016 |
| Energy-localized near-interface traps active in the strong-accumulation region of 4H-SiC MOS capacitors P Pande, S Dimitrijev, D Haasmann, HA Moghadam, P Tanner, J Han IEEE Transactions on Electron Devices 66 (4), 1704-1709, 2019 | 11 | 2019 |
| Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC P Pande, S Dimitrijev, D Haasmann, HA Moghadam, M Chaturvedi, ... Solid-State Electronics 171, 107874, 2020 | 10 | 2020 |
| Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitors Y Jia, H Lv, X Tang, C Han, Q Song, Y Zhang, Y Zhang, S Dimitrijev, ... Journal of Materials Science: Materials in Electronics 30, 10302-10310, 2019 | 10 | 2019 |
| Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methods AM Vidarsson, JR Nicholls, D Haasmann, S Dimitrijev, ... Journal of Applied Physics 131 (21), 2022 | 9 | 2022 |
| A figure of merit for selection of the best family of SiC power MOSFETs M Chaturvedi, S Dimitrijev, D Haasmann, HA Moghadam, P Pande, ... Electronics 11 (9), 1433, 2022 | 7 | 2022 |
| Growth of gate oxides on 4H-SiC by NO at low partial pressures D Haasmann, S Dimitrijev, JS Han, A Iacopi Materials Science Forum 778, 627-630, 2014 | 7 | 2014 |
| A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements JR Nicholls, AM Vidarsson, D Haasmann, EÖ Sveinbjörnsson, ... Journal of Applied Physics 129 (5), 2021 | 6 | 2021 |
| Electrically active defects in SiC power MOSFETs M Chaturvedi, D Haasmann, HA Moghadam, S Dimitrijev Energies 16 (4), 1771, 2023 | 5 | 2023 |
| A temperature independent effect of near-interface traps in 4H-SiC MOS capacitors P Pande, S Dimitrijev, D Haasmann, HA Moghadam, P Tanner, JS Han Materials Science Forum 963, 236-239, 2019 | 5 | 2019 |
