| Next generation ferroelectric materials for semiconductor process integration and their applications T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ... Journal of Applied Physics 129 (10), 2021 | 261 | 2021 |
| TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films PD Lomenzo, Q Takmeel, C Zhou, CM Fancher, E Lambers, ... Journal of Applied Physics 117 (13), 2015 | 187 | 2015 |
| Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering T Mittmann, M Materano, PD Lomenzo, MH Park, I Stolichnov, M Cavalieri, ... Advanced Materials Interfaces 6 (11), 1900042, 2019 | 177 | 2019 |
| Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes PD Lomenzo, P Zhao, Q Takmeel, S Moghaddam, T Nishida, M Nelson, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 137 | 2014 |
| Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices MH Park, DH Lee, K Yang, JY Park, GT Yu, HW Park, M Materano, ... Journal of Materials Chemistry C 8 (31), 10526-10550, 2020 | 122 | 2020 |
| Doped Hf0. 5Zr0. 5O2 for high efficiency integrated supercapacitors PD Lomenzo, CC Chung, C Zhou, JL Jones, T Nishida Applied Physics Letters 110 (23), 2017 | 100 | 2017 |
| Depolarization as driving force in antiferroelectric hafnia and ferroelectric wake-up PD Lomenzo, C Richter, T Mikolajick, U Schroeder ACS Applied Electronic Materials 2 (6), 1583-1595, 2020 | 84 | 2020 |
| Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics M Materano, PD Lomenzo, A Kersch, MH Park, T Mikolajick, U Schroeder Inorganic Chemistry Frontiers 8 (10), 2650-2672, 2021 | 83 | 2021 |
| Annealing behavior of ferroelectric Si-doped HfO2 thin films PD Lomenzo, Q Takmeel, S Moghaddam, T Nishida Thin Solid Films 615, 139-144, 2016 | 81 | 2016 |
| Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers M Materano, T Mittmann, PD Lomenzo, C Zhou, JL Jones, M Falkowski, ... ACS applied electronic materials 2 (11), 3618-3626, 2020 | 79 | 2020 |
| Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors P Buragohain, A Erickson, P Kariuki, T Mittmann, C Richter, PD Lomenzo, ... ACS applied materials & interfaces 11 (38), 35115-35121, 2019 | 79 | 2019 |
| Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium PD Lomenzo, Q Takmeel, CM Fancher, C Zhou, NG Rudawski, ... IEEE Electron Device Letters 36 (8), 766-768, 2015 | 79 | 2015 |
| Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors F Mehmood, M Hoffmann, PD Lomenzo, C Richter, M Materano, ... Advanced Materials Interfaces 6 (21), 1901180, 2019 | 78 | 2019 |
| Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium U Schroeder, M Materano, T Mittmann, PD Lomenzo, T Mikolajick, ... Japanese Journal of Applied Physics 58 (SL), SL0801, 2019 | 71 | 2019 |
| Polarization switching in thin doped HfO2 ferroelectric layers M Materano, PD Lomenzo, H Mulaosmanovic, M Hoffmann, A Toriumi, ... Applied Physics Letters 117 (26), 2020 | 64 | 2020 |
| The effects of layering in ferroelectric Si-doped HfO2 thin films PD Lomenzo, Q Takmeel, C Zhou, Y Liu, CM Fancher, JL Jones, ... Applied Physics Letters 105 (7), 2014 | 64 | 2014 |
| Material perspectives of HfO2-based ferroelectric films for device applications A Toriumi, L Xu, Y Mori, X Tian, PD Lomenzo, H Mulaosmanovic, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2019 | 45 | 2019 |
| Stabilizing the ferroelectric phase in HfO 2-based films sputtered from ceramic targets under ambient oxygen T Mittmann, M Michailow, PD Lomenzo, J Gärtner, M Falkowski, A Kersch, ... Nanoscale 13 (2), 912-921, 2021 | 44 | 2021 |
| Mixed Al and Si doping in ferroelectric HfO2 thin films PD Lomenzo, Q Takmeel, C Zhou, CC Chung, S Moghaddam, JL Jones, ... Applied Physics Letters 107 (24), 2015 | 44 | 2015 |
| Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields PD Lomenzo, S Slesazeck, M Hoffmann, T Mikolajick, U Schroeder, ... 2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-8, 2019 | 38 | 2019 |
