| First-principles study of boron diffusion in silicon W Windl, MM Bunea, R Stumpf, ST Dunham, MP Masquelier Physical review letters 83 (21), 4345, 1999 | 292 | 1999 |
| Nonvolatile electrically reconfigurable integrated photonic switch enabled by a silicon PIN diode heater J Zheng, Z Fang, C Wu, S Zhu, P Xu, JK Doylend, S Deshmukh, E Pop, ... Advanced Materials 32 (31), 2001218, 2020 | 204 | 2020 |
| A universal scaling of planar fault energy barriers in face-centered cubic metals ZH Jin, ST Dunham, H Gleiter, H Hahn, P Gumbsch Scripta Materialia 64 (7), 605-608, 2011 | 148 | 2011 |
| Variation of Band Gap and Lattice Parameters of β−(AlxGa1−x)2O3 Powder Produced by Solution Combustion Synthesis BW Krueger, CS Dandeneau, EM Nelson, ST Dunham, FS Ohuchi, ... Journal of the American Ceramic Society 99 (7), 2467-2473, 2016 | 121 | 2016 |
| Band bending and surface defects in β-Ga2O3 TC Lovejoy, R Chen, X Zheng, EG Villora, K Shimamura, H Yoshikawa, ... Applied Physics Letters 100 (18), 2012 | 112 | 2012 |
| Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory ST Dunham, JD Plummer Journal of applied physics 59 (7), 2541-2550, 1986 | 109 | 1986 |
| Modeling electrical switching of nonvolatile phase-change integrated nanophotonic structures with graphene heaters J Zheng, S Zhu, P Xu, S Dunham, A Majumdar ACS applied materials & interfaces 12 (19), 21827-21836, 2020 | 99 | 2020 |
| Atomistic models of vacancy‐mediated diffusion in silicon ST Dunham, CD Wu Journal of applied physics 78 (4), 2362-2366, 1995 | 99 | 1995 |
| A quantitative model for the coupled diffusion of phosphorus and point defects in silicon ST Dunham Journal of the Electrochemical Society 139 (9), 2628, 1992 | 98 | 1992 |
| Geometallurgy, geostatistics and project value—does your block model tell you what you need to know S Dunham, J Vann Proceedings of the Project Evaluation Conference, Melbourne, Australia, 19-20, 2007 | 86 | 2007 |
| The primary-response framework for geometallurgical variables S Coward, J Vann, S Dunham, M Stewart Seventh international mining geology conference, 109-113, 2009 | 80 | 2009 |
| Interactions of silicon point defects with SiO2 films ST Dunham Journal of applied physics 71 (2), 685-696, 1992 | 75 | 1992 |
| Consistent quantitative model for the spatial extent of point defect interactions in silicon AM Agarwal, ST Dunham Journal of applied physics 78 (9), 5313-5319, 1995 | 72 | 1995 |
| Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering B Feldman, S Park, M Haverty, S Shankar, ST Dunham physica status solidi (b) 247 (7), 1791-1796, 2010 | 71 | 2010 |
| Point‐defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment ST Dunham, JD Plummer Journal of applied physics 59 (7), 2551-2561, 1986 | 68 | 1986 |
| A predictive model for transient enhanced diffusion based on evolution of {311} defects AH Gencer, ST Dunham Journal of applied physics 81 (2), 631-636, 1997 | 62 | 1997 |
| Ab initio calculations to model anomalous fluorine behavior M Diebel, ST Dunham Physical review letters 93 (24), 245901, 2004 | 59 | 2004 |
| Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3 TC Lovejoy, R Chen, EN Yitamben, V Shutthanadan, SM Heald, ... Journal of Applied Physics 111 (12), 2012 | 46 | 2012 |
| Spinodal Decomposition During Anion Exchange in Colloidal Mn2+-Doped CsPbX3 (X = Cl, Br) Perovskite Nanocrystals MC De Siena, DE Sommer, SE Creutz, ST Dunham, DR Gamelin Chemistry of Materials 31 (18), 7711-7722, 2019 | 43 | 2019 |
| Modeling of the kinetics of dopant precipitation in silicon ST Dunham Journal of The Electrochemical Society 142 (8), 2823, 1995 | 41 | 1995 |
