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Sajad A Loan
Sajad A Loan
Professor of Electronics Engineering, Jamia Millia Islamia New Delhi
在 jmi.ac.in 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
A novel partial-ground-plane-based MOSFET on selective buried oxide: 2-D simulation study
SA Loan, S Qureshi, SSK Iyer
IEEE Transactions on Electron Devices 57 (3), 671-680, 2010
1172010
Drain-engineered TFET with fully suppressed ambipolarity for high-frequency application
MRU Shaikh, SA Loan
IEEE Transactions on Electron Devices 66 (4), 1628-1634, 2019
922019
A high-performance inverted-C tunnel junction FET with source–channel overlap pockets
SA Loan, M Rafat
IEEE Transactions on Electron Devices 65 (2), 763-768, 2018
832018
A high-performance source engineered charge plasma-based Schottky MOSFET on SOI
F Bashir, SA Loan, M Rafat, ARM Alamoud, SA Abbasi
IEEE Transactions on Electron Devices 62 (10), 3357-3364, 2015
722015
Dielectrically modulated source-engineered charge-plasma-based Schottky-FET as a label-free biosensor
SA Hafiz, M Ehteshamuddin, SA Loan
IEEE Transactions on Electron Devices 66 (4), 1905-1910, 2019
622019
A high performance gate engineered charge plasma based tunnel field effect transistor
F Bashir, SA Loan, M Rafat, ARM Alamoud, SA Abbasi
Journal of Computational Electronics 14 (2), 477-485, 2015
622015
A high performance charge plasma based lateral bipolar transistor on selective buried oxide
SA Loan, F Bashir, M Rafat, AR Alamoud, SA Abbasi
Semiconductor Science and Technology 29 (1), 015011, 2013
502013
Planar junctionless silicon-on-insulator transistor with buried metal layer
M Ehteshamuddin, SA Loan, M Rafat
IEEE Electron Device Letters 39 (6), 799-802, 2018
422018
Design and comparative analysis of high performance carbon nanotube-based operational transconductance amplifiers
SA Loan, M Nizamuddin, AR Alamoud, SA Abbasi
Nano 10 (03), 1550039, 2015
412015
Electrostatically doped DSL Schottky barrier MOSFET on SOI for low power applications
F Bashir, AG Alharbi, SA Loan
IEEE Journal of the Electron Devices Society 6, 19-25, 2017
352017
A vertical-gaussian doped soi-tfet with enhanced dc and analog/rf performance
M Ehteshamuddin, SA Loan, M Rafat
Semiconductor Science and Technology 33 (7), 075016, 2018
322018
Investigating a dual MOSCAP variant of line-TFET with improved vertical tunneling incorporating FIQC effect
M Ehteshamuddin, SA Loan, AG Alharbi, AM Alamoud, M Rafat
IEEE Transactions on Electron Devices 66 (11), 4638-4645, 2019
302019
Design, simulation and comparative analysis of CNT based cascode operational transconductance amplifiers
M Nizamuddin, SA Loan, AR Alamoud, SA Abbassi
Nanotechnology 26 (39), 395201, 2015
302015
Insights into the impact of pocket and source elevation in vertical gate elevated source tunnel FET structures
SA Loan, M Rafat
IEEE Transactions on Electron Devices 66 (1), 752-758, 2018
242018
A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator
SA Loan, F Bashir, M Rafat, ARM Alamoud, SA Abbasi
Semiconductor Science and Technology 29 (9), 095001, 2014
242014
VLSI Architecture of Fuzzy Logic Hardware Implementation: a Review.
AM Murshid, SA Loan, SA Abbasi, ARM Alamoud
International Journal of Fuzzy Systems 13 (2), 2011
242011
Ambipolar leakage suppression in electron–hole bilayer TFET: Investigation and analysis
Ashita, SA Loan, AG Alharbi, M Rafat
Journal of Computational Electronics 17, 977-985, 2018
232018
Design and Simulation of High Performance Carbon Nanotube Based Three Stage Operational Amplifiers
ARMA M. Nizamuddina, Sajad A. Loana, Shuja A. Abbasib
Materials Today: Proceedings 3 (2), 449-453, 2016
232016
A novel double gate metal source/drain Schottky MOSFET as an inverter
SA Loan, S Kumar, AM Alamoud
Superlattices and Microstructures 91, 78-89, 2016
222016
Design of a novel high gain carbon nanotube based operational transconductance amplifier
SA Loan, M Nizamuddin, F Bashir, H Shabir, AM Murshid, AR Alamoud, ...
Proceedings of the international multiconference of engineers and computer …, 2014
212014
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