A novel partial-ground-plane-based MOSFET on selective buried oxide: 2-D simulation study SA Loan, S Qureshi, SSK Iyer IEEE Transactions on Electron Devices 57 (3), 671-680, 2010 | 117 | 2010 |
Drain-engineered TFET with fully suppressed ambipolarity for high-frequency application MRU Shaikh, SA Loan IEEE Transactions on Electron Devices 66 (4), 1628-1634, 2019 | 92 | 2019 |
A high-performance inverted-C tunnel junction FET with source–channel overlap pockets SA Loan, M Rafat IEEE Transactions on Electron Devices 65 (2), 763-768, 2018 | 83 | 2018 |
A high-performance source engineered charge plasma-based Schottky MOSFET on SOI F Bashir, SA Loan, M Rafat, ARM Alamoud, SA Abbasi IEEE Transactions on Electron Devices 62 (10), 3357-3364, 2015 | 72 | 2015 |
Dielectrically modulated source-engineered charge-plasma-based Schottky-FET as a label-free biosensor SA Hafiz, M Ehteshamuddin, SA Loan IEEE Transactions on Electron Devices 66 (4), 1905-1910, 2019 | 62 | 2019 |
A high performance gate engineered charge plasma based tunnel field effect transistor F Bashir, SA Loan, M Rafat, ARM Alamoud, SA Abbasi Journal of Computational Electronics 14 (2), 477-485, 2015 | 62 | 2015 |
A high performance charge plasma based lateral bipolar transistor on selective buried oxide SA Loan, F Bashir, M Rafat, AR Alamoud, SA Abbasi Semiconductor Science and Technology 29 (1), 015011, 2013 | 50 | 2013 |
Planar junctionless silicon-on-insulator transistor with buried metal layer M Ehteshamuddin, SA Loan, M Rafat IEEE Electron Device Letters 39 (6), 799-802, 2018 | 42 | 2018 |
Design and comparative analysis of high performance carbon nanotube-based operational transconductance amplifiers SA Loan, M Nizamuddin, AR Alamoud, SA Abbasi Nano 10 (03), 1550039, 2015 | 41 | 2015 |
Electrostatically doped DSL Schottky barrier MOSFET on SOI for low power applications F Bashir, AG Alharbi, SA Loan IEEE Journal of the Electron Devices Society 6, 19-25, 2017 | 35 | 2017 |
A vertical-gaussian doped soi-tfet with enhanced dc and analog/rf performance M Ehteshamuddin, SA Loan, M Rafat Semiconductor Science and Technology 33 (7), 075016, 2018 | 32 | 2018 |
Investigating a dual MOSCAP variant of line-TFET with improved vertical tunneling incorporating FIQC effect M Ehteshamuddin, SA Loan, AG Alharbi, AM Alamoud, M Rafat IEEE Transactions on Electron Devices 66 (11), 4638-4645, 2019 | 30 | 2019 |
Design, simulation and comparative analysis of CNT based cascode operational transconductance amplifiers M Nizamuddin, SA Loan, AR Alamoud, SA Abbassi Nanotechnology 26 (39), 395201, 2015 | 30 | 2015 |
Insights into the impact of pocket and source elevation in vertical gate elevated source tunnel FET structures SA Loan, M Rafat IEEE Transactions on Electron Devices 66 (1), 752-758, 2018 | 24 | 2018 |
A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator SA Loan, F Bashir, M Rafat, ARM Alamoud, SA Abbasi Semiconductor Science and Technology 29 (9), 095001, 2014 | 24 | 2014 |
VLSI Architecture of Fuzzy Logic Hardware Implementation: a Review. AM Murshid, SA Loan, SA Abbasi, ARM Alamoud International Journal of Fuzzy Systems 13 (2), 2011 | 24 | 2011 |
Ambipolar leakage suppression in electron–hole bilayer TFET: Investigation and analysis Ashita, SA Loan, AG Alharbi, M Rafat Journal of Computational Electronics 17, 977-985, 2018 | 23 | 2018 |
Design and Simulation of High Performance Carbon Nanotube Based Three Stage Operational Amplifiers ARMA M. Nizamuddina, Sajad A. Loana, Shuja A. Abbasib Materials Today: Proceedings 3 (2), 449-453, 2016 | 23 | 2016 |
A novel double gate metal source/drain Schottky MOSFET as an inverter SA Loan, S Kumar, AM Alamoud Superlattices and Microstructures 91, 78-89, 2016 | 22 | 2016 |
Design of a novel high gain carbon nanotube based operational transconductance amplifier SA Loan, M Nizamuddin, F Bashir, H Shabir, AM Murshid, AR Alamoud, ... Proceedings of the international multiconference of engineers and computer …, 2014 | 21 | 2014 |