| New insights in the relation between electron trap generation and the statistical properties of oxide breakdown R Degraeve, G Groeseneken, R Bellens, JL Ogier, M Depas, PJ Roussel, ... IEEE Transactions on Electron Devices 45 (4), 904-911, 1998 | 762 | 1998 |
| Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ... IEEE Transactions on Electron Devices 49 (3), 500-506, 2002 | 237 | 2002 |
| Comphy—A compact-physics framework for unified modeling of BTI G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ... Microelectronics Reliability 85, 49-65, 2018 | 181 | 2018 |
| A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown R Degraeve, JL Ogier, R Bellens, PJ Roussel, G Groeseneken, HE Maes IEEE Transactions on Electron Devices 45 (2), 472-481, 1998 | 160 | 1998 |
| SiGe channel technology: Superior reliability toward ultrathin EOT devices—Part I: NBTI J Franco, B Kaczer, PJ Roussel, J Mitard, M Cho, L Witters, T Grasser, ... IEEE Transactions on Electron Devices 60 (1), 396-404, 2012 | 118 | 2012 |
| Atomic layer deposition of ruthenium with TiN interface for sub-10 nm advanced interconnects beyond copper LG Wen, P Roussel, OV Pedreira, B Briggs, B Groven, S Dutta, ... ACS applied materials & interfaces 8 (39), 26119-26125, 2016 | 116 | 2016 |
| Channel Hot Carrier Degradation Mechanism in Long/Short Channel -FinFETs M Cho, P Roussel, B Kaczer, R Degraeve, J Franco, M Aoulaiche, ... IEEE Transactions on Electron Devices 60 (12), 4002-4007, 2013 | 107 | 2013 |
| Insight into N/PBTI mechanisms in sub-1-nm-EOT devices M Cho, JD Lee, M Aoulaiche, B Kaczer, P Roussel, T Kauerauf, ... IEEE Transactions on Electron Devices 59 (8), 2042-2048, 2012 | 105 | 2012 |
| Impact of Wire Geometry on Interconnect RC and Circuit Delay I Ciofi, A Contino, PJ Roussel, R Baert, VH Vega-Gonzalez, K Croes, ... IEEE Transactions on Electron Devices 63 (6), 2488-2496, 2016 | 104 | 2016 |
| Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/gate stacks with TiN electrodes A Kerber, E Cartier, R Degraeve, PJ Roussel, L Pantisano, T Kauerauf, ... IEEE Transactions on Electron Devices 50 (5), 1261-1269, 2003 | 104 | 2003 |
| On the cost-effectiveness of matching repositories of pre-tested wafers for wafer-to-wafer 3D chip stacking J Verbree, EJ Marinissen, P Roussel, D Velenis 2010 15th IEEE European Test Symposium, 36-41, 2010 | 68 | 2010 |
| Modeling of via resistance for advanced technology nodes I Ciofi, PJ Roussel, Y Saad, V Moroz, CY Hu, R Baert, K Croes, A Contino, ... IEEE transactions on Electron Devices 64 (5), 2306-2313, 2017 | 63 | 2017 |
| On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown R Degraeve, JL Ogier, R Bellens, P Roussel, G Groeseneken, HE Maes Proceedings of International Reliability Physics Symposium, 44-54, 1996 | 60 | 1996 |
| Analysis of HBM ESD testers and specifications using a fourth‐order lumped element model K Verhaege, PJ Roussel, G Groeseneken, HE Maes, H Gieser, C Russ, ... Quality and reliability engineering international 10 (4), 325-334, 1994 | 58 | 1994 |
| Implications of BTI-induced time-dependent statistics on yield estimation of digital circuits P Weckx, B Kaczer, M Toledano-Luque, P Raghavan, J Franco, ... IEEE Transactions on Electron Devices 61 (3), 666-673, 2014 | 55 | 2014 |
| Impact of stochastic mismatch on measured SRAM performance of FinFETs with resist/spacer-defined fins: Role of line-edge-roughness A Dixit, KG Anil, E Baravelli, P Roussel, A Mercha, C Gustin, M Bamal, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 54 | 2006 |
| Experimental validation of self-heating simulations and projections for transistors in deeply scaled nodes E Bury, B Kaczer, P Roussel, R Ritzenthaler, K Raleva, D Vasileska, ... 2014 IEEE International Reliability Physics Symposium, XT. 8.1-XT. 8.6, 2014 | 53 | 2014 |
| Statistical insight into controlled forming and forming free stacks for HfOx RRAM N Raghavan, A Fantini, R Degraeve, PJ Roussel, L Goux, B Govoreanu, ... Microelectronic Engineering 109, 177-181, 2013 | 53 | 2013 |
| Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT/spl sim/1 nm) SiON films B Kaczer, R Degraeve, R O'Connor, P Roussel, G Groeseneken IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 53 | 2004 |
| Stress polarity dependence of degradation and breakdown of SiO/sub 2//high-k stacks R Degrave, T Kauerauf, A Kerber, E Cartier, B Govoreanu, P Roussel, ... 2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003 | 53 | 2003 |
