| Carbon-nanotube-embedded hydrogel sheets for engineering cardiac constructs and bioactuators SR Shin, SM Jung, M Zalabany, K Kim, P Zorlutuna, S Kim, M Nikkhah, ... ACS nano 7 (3), 2369-2380, 2013 | 945 | 2013 |
| GaN-on-Si vertical Schottky and pn diodes Y Zhang, M Sun, D Piedra, M Azize, X Zhang, T Fujishima, T Palacios IEEE electron device letters 35 (6), 618-620, 2014 | 204 | 2014 |
| Origin and control of OFF-state leakage current in GaN-on-Si vertical diodes Y Zhang, M Sun, HY Wong, Y Lin, P Srivastava, C Hatem, M Azize, ... IEEE Transactions on Electron Devices 62 (7), 2155-2161, 2015 | 161 | 2015 |
| Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ... IEEE electron device letters 34 (8), 969-971, 2013 | 126 | 2013 |
| Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures M Azize, T Palacios Journal of Applied Physics 108 (2), 2010 | 100 | 2010 |
| Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE Z Bougrioua, M Azize, P Lorenzini, M Laügt, H Haas physica status solidi (a) 202 (4), 536-544, 2005 | 75 | 2005 |
| Top-down fabrication of AlGaN/GaN nanoribbons M Azize, T Palacios Applied Physics Letters 98 (4), 2011 | 64 | 2011 |
| High-electron-mobility transistors based on InAlN/GaN nanoribbons M Azize, AL Hsu, OI Saadat, M Smith, X Gao, S Guo, S Gradecak, ... IEEE electron device letters 32 (12), 1680-1682, 2011 | 45 | 2011 |
| AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Y Cordier, M Azize, N Baron, S Chenot, O Tottereau, J Massies Journal of crystal growth 309 (1), 1-7, 2007 | 38 | 2007 |
| Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al, Ga) N∕ GaN heterostructures P Vennéguès, Z Bougrioua, JM Bethoux, M Azize, O Tottereau Journal of applied physics 97 (2), 2005 | 37 | 2005 |
| Field-plate structures for semiconductor devices L Xia, M Azize, B Lu US Patent 9,911,817, 2018 | 36 | 2018 |
| High temperature behaviour of GaN HEMT devices on Si (111) and sapphire substrates R Cuerdo, F Calle, AF Braña, Y Cordier, M Azize, N Baron, S Chenot, ... physica status solidi c 5 (6), 1971-1973, 2008 | 35 | 2008 |
| Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors S Joglekar, M Azize, M Beeler, E Monroy, T Palacios Applied Physics Letters 109 (4), 2016 | 33 | 2016 |
| Impact of Al2O3Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors S Joglekar, M Azize, EJ Jones, D Piedra, S Gradečak, T Palacios IEEE Transactions on Electron Devices 63 (1), 318-325, 2015 | 33 | 2015 |
| Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs Z Bougrioua, M Azize, A Jimenez, AF Braña, P Lorenzini, B Beaumont, ... physica status solidi (c) 2 (7), 2424-2428, 2005 | 33 | 2005 |
| Semiconductor structure with a spacer layer M Azize, B Lu, L Xia US Patent 9,536,984, 2017 | 26 | 2017 |
| Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Y Cordier, M Azize, N Baron, Z Bougrioua, S Chenot, O Tottereau, ... Journal of crystal growth 310 (5), 948-954, 2008 | 23 | 2008 |
| Investigation of AlGaN∕ AlN∕ GaN heterostructures for magnetic sensor application from liquid helium temperature to 300° C L Bouguen, S Contreras, B Jouault, L Konczewicz, J Camassel, Y Cordier, ... Applied Physics Letters 92 (4), 2008 | 22 | 2008 |
| Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates M Azize, Z Bougrioua, P Gibart Journal of crystal growth 299 (1), 103-108, 2007 | 22 | 2007 |
| Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕ GaN heterostructures P Lorenzini, Z Bougrioua, A Tiberj, R Tauk, M Azize, M Sakowicz, ... Applied Physics Letters 87 (23), 2005 | 22 | 2005 |
Tomás PalaciosMIT在 mit.edu 的电子邮件经过验证
