| Characterization and modeling of temperature effects in 3-D NAND flash arrays—Part I: Polysilicon-induced variability D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AS Spinelli, ... IEEE Transactions on Electron Devices 65 (8), 3199-3206, 2018 | 61 | 2018 |
| Characterization and modeling of temperature effects in 3-D NAND Flash arrays—Part II: Random telegraph noise G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AS Spinelli, ... IEEE Transactions on Electron Devices 65 (8), 3207-3213, 2018 | 31 | 2018 |
| Temperature activation of the string current and its variability in 3-D NAND Flash arrays D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AL Lacaita, ... 2017 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2017 | 23 | 2017 |
| Impact of temperature on the amplitude of RTN fluctuations in 3-D NAND Flash cells G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AL Lacaita, ... 2017 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2017 | 19 | 2017 |
| Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings G Malavena, A Mannara, AL Lacaita, A Sottocornola Spinelli, ... Journal of Computational Electronics 18, 561-568, 2019 | 16 | 2019 |
| A comparison of modeling approaches for current transport in polysilicon-channel nanowire and macaroni GAA MOSFETs A Mannara, G Malavena, A Sottocornola Spinelli, C Monzio Compagnoni Journal of Computational Electronics 20, 537-544, 2021 | 7 | 2021 |
| Current transport in polysilicon-channel GAA MOSFETs: A modeling perspective A Mannara, AS Spinelli, AL Lacaita, CM Compagnoni ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 6 | 2019 |
| TCAD modeling of current transport and main reliability issues of polysilicon-channel 3-D NAND Flash strings A Mannara Politecnico di Milano, 2020 | | 2020 |
| TCAD simulation of charge transport in the polysilicon channel of 3D NAND Flash strings A MANNARA Politecnico di Milano, 2016 | | 2016 |
