Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control HA Fonseka, P Caroff, J Wong-Leung, AS Ameruddin, HH Tan, ... ACS nano 8 (7), 6945-6954, 2014 | 70 | 2014 |
Bandgap energy of wurtzite InAs nanowires MB Rota, AS Ameruddin, HA Fonseka, Q Gao, F Mura, A Polimeni, ... Nano letters 16 (8), 5197-5203, 2016 | 66 | 2016 |
Temperature dependence of interband transitions in wurtzite InP nanowires A Zilli, M De Luca, D Tedeschi, HA Fonseka, A Miriametro, HH Tan, ... ACS nano 9 (4), 4277-4287, 2015 | 54 | 2015 |
Polarized light absorption in wurtzite InP nanowire ensembles M De Luca, A Zilli, HA Fonseka, S Mokkapati, A Miriametro, HH Tan, ... Nano letters 15 (2), 998-1005, 2015 | 52 | 2015 |
Long-lived hot carriers in III–V nanowires D Tedeschi, M De Luca, HA Fonseka, Q Gao, F Mura, HH Tan, S Rubini, ... Nano Letters 16 (5), 3085-3093, 2016 | 50 | 2016 |
InxGa1− xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology AS Ameruddin, HA Fonseka, P Caroff, J Wong-Leung, RLMO het Veld, ... Nanotechnology 26 (20), 205604, 2015 | 48 | 2015 |
Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing S Skalsky, Y Zhang, JA Alanis, HA Fonseka, AM Sanchez, H Liu, ... Light: Science & Applications 9 (1), 43, 2020 | 31 | 2020 |
Growth of pure zinc-blende GaAs (P) core–shell nanowires with highly regular morphology Y Zhang, HA Fonseka, M Aagesen, JA Gott, AM Sanchez, J Wu, D Kim, ... Nano letters 17 (8), 4946-4950, 2017 | 30 | 2017 |
Magneto-optical properties of wurtzite-phase InP nanowires M De Luca, A Polimeni, HA Fonseka, AJ Meaney, PCM Christianen, ... Nano letters 14 (8), 4250-4256, 2014 | 28 | 2014 |
High vertical yield InP nanowire growth on Si (111) using a thin buffer layer HA Fonseka, HH Tan, J Wong-Leung, JH Kang, P Parkinson, C Jagadish Nanotechnology 24 (46), 465602, 2013 | 28 | 2013 |
Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement Y Zhang, G Davis, HA Fonseka, A Velichko, A Gustafsson, T Godde, ... ACS nano, 2019 | 25 | 2019 |
Stable defects in semiconductor nanowires AM Sanchez, JA Gott, HA Fonseka, Y Zhang, H Liu, R Beanland Nano Letters 18 (5), 3081-3087, 2018 | 24 | 2018 |
Defect-free axially stacked GaAs/GaAsP nanowire quantum dots with strong carrier confinement Y Zhang, AV Velichko, HA Fonseka, P Parkinson, JA Gott, G Davis, ... Nano Letters 21 (13), 5722-5729, 2021 | 21 | 2021 |
Growth and fabrication of high‐quality single nanowire devices with radial p‐i‐n junctions Y Zhang, AM Sanchez, M Aagesen, S Huo, HA Fonseka, JA Gott, D Kim, ... Small 15 (3), 1803684, 2019 | 21 | 2019 |
Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation P Perla, HA Fonseka, P Zellekens, R Deacon, Y Han, J Kölzer, T Mörstedt, ... Nanoscale Advances 3 (5), 1413-1421, 2021 | 20 | 2021 |
Self-formed quantum wires and dots in GaAsP–GaAsP core–shell nanowires HA Fonseka, AV Velichko, Y Zhang, JA Gott, GD Davis, R Beanland, H Liu, ... Nano letters 19 (6), 4158-4165, 2019 | 19 | 2019 |
Robust Protection of III–V Nanowires in Water Splitting by a Thin Compact TiO2 Layer F Cui, Y Zhang, HA Fonseka, P Promdet, AI Channa, M Wang, X Xia, ... ACS Applied Materials & Interfaces 13 (26), 30950-30958, 2021 | 15 | 2021 |
Hard-Gap Spectroscopy in a Self-Defined Mesoscopic / Nanowire Josephson Junction P Zellekens, R Deacon, P Perla, HA Fonseka, T Moerstedt, SA Hindmarsh, ... Physical review applied 14 (5), 054019, 2020 | 12 | 2020 |
InP–In x Ga 1− x As core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range HA Fonseka, AS Ameruddin, P Caroff, D Tedeschi, M De Luca, F Mura, ... Nanoscale 9 (36), 13554-13562, 2017 | 12 | 2017 |
Preferred growth direction of III–V nanowires on differently oriented Si substrates H Zeng, X Yu, HA Fonseka, G Boras, P Jurczak, T Wang, AM Sanchez, ... Nanotechnology 31 (47), 475708, 2020 | 11 | 2020 |