| Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing SW Ryu, K Min, J Shin, H Kwon, D Nam, T Oh, TS Jang, M Yoo, Y Kim, ... 2017 IEEE International Electron Devices Meeting (IEDM), 21.6. 1-21.6. 4, 2017 | 63 | 2017 |
| Zinc tin oxide synaptic device for neuromorphic engineering JH Ryu, B Kim, F Hussain, M Ismail, C Mahata, T Oh, M Imran, KK Min, ... IEEE Access 8, 130678-130686, 2020 | 57 | 2020 |
| Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array TH Kim, H Nili, MH Kim, KK Min, BG Park, H Kim Applied Physics Letters 117 (15), 2020 | 48 | 2020 |
| Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ... Nanoscale 14 (6), 2177-2185, 2022 | 36 | 2022 |
| Capacitor-based synaptic devices for hardware spiking neural networks S Hwang, J Yu, GH Lee, MS Song, J Chang, KK Min, T Jang, JH Lee, ... IEEE Electron Device Letters 43 (4), 549-552, 2022 | 32 | 2022 |
| Low-latency spiking neural networks using pre-charged membrane potential and delayed evaluation S Hwang, J Chang, MH Oh, KK Min, T Jang, K Park, J Yu, JH Lee, ... Frontiers in Neuroscience 15, 629000, 2021 | 31 | 2021 |
| Electrical and thermal performances of omega-shaped-gate nanowire field effect transistors for low power operation YS Song, S Hwang, KK Min, T Jang, Y Choi, J Yu, JH Lee, BG Park Journal of nanoscience and nanotechnology 20 (7), 4092-4096, 2020 | 26 | 2020 |
| Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application KK Min, J Yu, Y Kim, CS Kim, T Jang, S Hwang, H Kim, JH Lee, D Kwon, ... Applied Surface Science 573, 151566, 2022 | 21 | 2022 |
| Effect of carrier transport process on tunneling electroresistance in ferroelectric tunnel junction RH Koo, W Shin, KK Min, D Kwon, DH Kim, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters 44 (1), 164-167, 2022 | 18 | 2022 |
| 1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network W Shin, KK Min, JH Bae, J Kim, RH Koo, D Kwon, JJ Kim, D Kwon, JH Lee Advanced Intelligent Systems 5 (6), 2200377, 2023 | 16 | 2023 |
| Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure B Pandit, HS Jang, Y Jeong, S An, S Chandramohan, KK Min, SM Won, ... Advanced Materials Interfaces 10 (12), 2202379, 2023 | 15 | 2023 |
| Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure YS Song, T Jang, KK Min, MH Baek, J Yu, Y Kim, JH Lee, BG Park Japanese Journal of Applied Physics 59 (6), 061006, 2020 | 15 | 2020 |
| Crystallized HfLaO embedded tetragonal ZrO2 for dynamic random access memory capacitor dielectrics Y Shin, KK Min, SH Lee, SK Lim, JS Oh, KJ Lee, K Hong, BJ Cho Applied Physics Letters 98 (17), 2011 | 15 | 2011 |
| Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x-based metal-ferroelectric-insulator-semiconductor stack KK Min, J Yu, Y Kim, JH Lee, D Kwon, BG Park Nanotechnology 32 (49), 495203, 2021 | 14 | 2021 |
| Semiconductor device having buried gate structure, method for manufacturing the same, memory cell having the same, and electronic device having the same KK Min US Patent 9,589,960, 2017 | 14 | 2017 |
| Optimizing post-metal annealing temperature considering different resistive switching mechanisms in ferroelectric tunnel junction RH Koo, W Shin, KK Min, D Kwon, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters 44 (6), 935-938, 2023 | 13 | 2023 |
| Unveiling Resistance Switching Mechanisms in Undoped HfOx Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy W Shin, RH Koo, KK Min, D Kwon, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters 44 (2), 345-348, 2022 | 13 | 2022 |
| Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure Y Kim, KK Min, J Yu, D Kwon, BG Park Semiconductor Science and Technology 37 (4), 045001, 2022 | 13 | 2022 |
| A novel physical unclonable function (PUF) using 16× 16 pure-HfO x ferroelectric tunnel junction array for security applications J Yu, KK Min, Y Kim, S Kim, S Hwang, TH Kim, C Kim, H Kim, JH Lee, ... Nanotechnology 32 (48), 485202, 2021 | 13 | 2021 |
| Effect of Al Concentration on Ferroelectric Properties in HfAlOx‐Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications J Kim, D Kim, KK Min, M Kraatz, T Han, S Kim Advanced Intelligent Systems 5 (8), 2300080, 2023 | 11 | 2023 |
