| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1115 | 2018 |
| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 768 | 2008 |
| Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 2013 | 465 | 2013 |
| Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013 | 411 | 2013 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 399 | 2020 |
| A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009 | 332 | 2009 |
| A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008 | 325 | 2008 |
| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 310 | 2021 |
| Power GaN Devices M Meneghini, G Meneghesso, E Zanoni Cham: Springer International Publishing, 2017 | 219 | 2017 |
| Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008 | 211 | 2008 |
| Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ... IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014 | 177 | 2014 |
| Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE transactions on electron devices 58 (9), 2996-3003, 2011 | 176 | 2011 |
| AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013 | 168 | 2013 |
| A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 2009 | 167 | 2009 |
| Technology and reliability of normally-off GaN HEMTs with p-type gate M Meneghini, O Hilt, J Wuerfl, G Meneghesso Energies 10 (2), 153, 2017 | 166 | 2017 |
| Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 2012 | 153 | 2012 |
| Reliability and parasitic issues in GaN-based power HEMTs: A review G Meneghesso, M Meneghini, I Rossetto, D Bisi, S Stoffels, M Van Hove, ... Semiconductor Science and Technology 31 (9), 093004, 2016 | 150 | 2016 |
| Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ... IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016 | 146 | 2016 |
| Breakdown mechanisms in AlGaN/GaN HEMTs: an overview G Meneghesso, M Meneghini, E Zanoni Japanese Journal of Applied Physics 53 (10), 100211, 2014 | 142 | 2014 |
| Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010 | 135 | 2010 |
