| Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy D Wang, P Wang, B Wang, Z Mi Applied Physics Letters 119 (11), 2021 | 57 | 2021 |
| N-polar ScAlN and HEMTs grown by molecular beam epitaxy P Wang, D Wang, B Wang, S Mohanty, S Diez, Y Wu, Y Sun, E Ahmadi, ... Applied Physics Letters 119 (8), 2021 | 41 | 2021 |
| Oxygen defect dominated photoluminescence emission of ScxAl1− xN grown by molecular beam epitaxy P Wang, B Wang, DA Laleyan, A Pandey, Y Wu, Y Sun, X Liu, Z Deng, ... Applied Physics Letters 118 (3), 2021 | 30 | 2021 |
| Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN P Wang, D Wang, Y Bi, B Wang, J Schwartz, R Hovden, Z Mi Applied Physics Letters 120 (1), 2022 | 29 | 2022 |
| Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, C Clymore, E Kayede, W Liu, ... IEEE Microwave and Wireless Technology Letters 34 (2), 183-186, 2024 | 2 | 2024 |
| Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz E Akso, W Li, C Clymore, EO Malley, M Guidry, J Kim, B Romanczyk, ... IEEE Microwave and Wireless Technology Letters, 2024 | | 2024 |
