关注
Younghee Lee
Younghee Lee
Lam Research
在 colorado.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride
Y Lee, SM George
ACS nano 9 (2), 2061-2070, 2015
1792015
Prospects for thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions
SM George, Y Lee
ACS nano 10 (5), 4889-4894, 2016
1412016
Surface-coating regulated lithiation kinetics and degradation in silicon nanowires for lithium ion battery
L Luo, H Yang, P Yan, JJ Travis, Y Lee, N Liu, D Molina Piper, SH Lee, ...
ACS nano 9 (5), 5559-5566, 2015
1312015
Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions
Y Lee, JW DuMont, SM George
Chemistry of Materials 28 (9), 2994-3003, 2016
1112016
Selectivity in thermal atomic layer etching using sequential, self-limiting fluorination and ligand-exchange reactions
Y Lee, C Huffman, SM George
Chemistry of Materials 28 (21), 7657-7665, 2016
1052016
Thermal Atomic Layer Etching of Titanium Nitride Using Sequential, Self-Limiting Reactions: Oxidation to TiO2 and Fluorination to Volatile TiF4
Y Lee, SM George
Chemistry of Materials 29 (19), 8202-8210, 2017
812017
Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride
Y Lee, JW DuMont, AS Cavanagh, SM George
The Journal of Physical Chemistry C 119 (25), 14185-14194, 2015
782015
Atomic layer etching of HfO2 using sequential, self-limiting thermal reactions with Sn (acac) 2 and HF
Y Lee, JW DuMont, SM George
ECS Journal of Solid State Science and Technology 4 (6), N5013, 2015
742015
Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
SM George, Y Lee, N Johnson
US Patent 10,208,383, 2019
732019
Mechanism of Thermal Al2O3 Atomic Layer Etching Using Sequential Reactions with Sn(acac)2 and HF
Y Lee, JW DuMont, SM George
Chemistry of Materials 27 (10), 3648-3657, 2015
712015
Coating Solution for High-Voltage Cathode: AlF3 Atomic Layer Deposition for Freestanding LiCoO2 Electrodes with High Energy Density and Excellent Flexibility
Y Zhou, Y Lee, H Sun, JM Wallas, SM George, M Xie
ACS applied materials & interfaces 9 (11), 9614-9619, 2017
692017
Atomic layer deposition of LiOH and Li2CO3 using lithium t-butoxide as the lithium source
AS Cavanagh, Y Lee, B Yoon, S George
ECS transactions 33 (2), 223, 2010
692010
Atomic layer deposition of metal fluorides using HF–pyridine as the fluorine precursor
Y Lee, H Sun, MJ Young, SM George
Chemistry of Materials 28 (7), 2022-2032, 2016
672016
Molecular layer deposition of aluminum alkoxide polymer films using trimethylaluminum and glycidol
Y Lee, B Yoon, AS Cavanagh, SM George
Langmuir 27 (24), 15155-15164, 2011
502011
Thermal atomic layer etching of HfO2 using HF for fluorination and TiCl4 for ligand-exchange
Y Lee, SM George
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (6 …, 2018
442018
Thermal Atomic Layer Etching of Al2O3, HfO2, and ZrO2 Using Sequential Hydrogen Fluoride and Dimethylaluminum Chloride Exposures
Y Lee, SM George
The Journal of Physical Chemistry C 123 (30), 18455-18466, 2019
422019
Molecular layer deposition of conductive hybrid organic-inorganic thin films using diethylzinc and hydroquinone
B Yoon, Y Lee, A Derk, C Musgrave, S George
ECS Transactions 33 (27), 191, 2011
422011
Atomic Layer Etching of AlF3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride
Y Lee, JW DuMont, SM George
The Journal of Physical Chemistry C 119 (45), 25385-25393, 2015
402015
First transistor demonstration of thermal atomic layer etching: InGaAs FinFETs with sub-5 nm fin-width featuring in situ ALE-ALD
W Lu, Y Lee, J Murdzek, J Gertsch, A Vardi, L Kong, SM George, ...
2018 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2018
362018
Cross-linked aluminum dioxybenzene coating for stabilization of silicon electrodes
DM Piper, Y Lee, SB Son, T Evans, F Lin, D Nordlund, X Xiao, SM George, ...
Nano Energy 22, 202-210, 2016
352016
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