| Frontiers of silicon-on-insulator GK Celler, S Cristoloveanu Journal of Applied Physics 93 (9), 4955-4978, 2003 | 1267 | 2003 |
| Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance F Balestra, S Cristoloveanu, M Benachir, J Brini, T Elewa IEEE Electron Device Letters 8 (9), 410-412, 1987 | 923 | 1987 |
| Electrical characterization of silicon-on-insulator materials and devices S Cristoloveanu, S Li Springer Science & Business Media, 2013 | 822 | 2013 |
| Ultimately thin double-gate SOI MOSFETs T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ... IEEE transactions on electron devices 50 (3), 830-838, 2003 | 299 | 2003 |
| A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications S Cristoloveanu, D Munteanu, MST Liu IEEE Transactions on Electron Devices 47 (5), 1018-1027, 2000 | 259 | 2000 |
| A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation M Bawedin, S Cristoloveanu, D Flandre IEEE Electron Device Letters 29 (7), 795-798, 2008 | 212 | 2008 |
| Silicon on insulator technologies and devices: from present to future S Cristoloveanu Solid-State Electronics 45 (8), 1403-1411, 2001 | 197 | 2001 |
| Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture T Ernst, C Tinella, C Raynaud, S Cristoloveanu Solid-State Electronics 46 (3), 373-378, 2002 | 191 | 2002 |
| Lateral interband tunneling transistor in silicon-on-insulator C Aydin, A Zaslavsky, S Luryi, S Cristoloveanu, D Mariolle, D Fraboulet, ... Applied Physics Letters 84 (10), 1780-1782, 2004 | 187 | 2004 |
| Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers S Cristoloveanu, S Williams IEEE Electron Device Letters 13 (2), 102-104, 1992 | 166 | 1992 |
| Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo Solid-State Electronics 51 (2), 239-244, 2007 | 157 | 2007 |
| A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu IEEE Electron Device Letters 33 (2), 179-181, 2011 | 148 | 2011 |
| 75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ... Digest. International Electron Devices Meeting,, 355-358, 2002 | 146 | 2002 |
| A review of sharp-switching devices for ultra-low power applications S Cristoloveanu, J Wan, A Zaslavsky IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016 | 140 | 2016 |
| Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Solid-State Electronics 65, 226-233, 2011 | 136 | 2011 |
| High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013 | 126 | 2013 |
| Coupling effects and channels separation in FinFETs F Daugé, J Pretet, S Cristoloveanu, A Vandooren, L Mathew, J Jomaah, ... Solid-State Electronics 48 (4), 535-542, 2004 | 115 | 2004 |
| Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling J Pretet, S Monfray, S Cristoloveanu, T Skotnicki IEEE Transactions on Electron Devices 51 (2), 240-245, 2004 | 111 | 2004 |
| Fin-width dependence of ionizing radiation-induced subthreshold-swing degradation in 100-nm-gate-length FinFETs F El Mamouni, EX Zhang, RD Schrimpf, DM Fleetwood, RA Reed, ... IEEE Transactions on Nuclear Science 56 (6), 3250-3255, 2009 | 108 | 2009 |
| Total ionizing dose effects on triple-gate FETs M Gaillardin, P Paillet, V Ferlet-Cavrois, O Faynot, C Jahan, ... IEEE Transactions on Nuclear Science 53 (6), 3158-3165, 2006 | 107 | 2006 |
Gerard GhibaudoIMEP-LAHC, Minatec-INP Grenoble在 minatec.inpg.fr 的电子邮件经过验证
