| Demonstration of Highly Robust 5 nm Hf0. 5Zr0. 5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality YK Liang, JS Wu, CY Teng, HL Ko, QH Luc, CJ Su, EY Chang, CH Lin IEEE Electron Device Letters 42 (9), 1299-1302, 2021 | 35 | 2021 |
| Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD D Anandan, RK Kakkerla, HW Yu, HL Ko, V Nagarajan, SK Singh, CT Lee, ... Journal of Crystal Growth 506, 45-54, 2019 | 10 | 2019 |
| Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current HL Ko, QH Luc, P Huang, SM Chen, JY Wu, CW Hsu, NA Tran, EY Chang IEEE Transactions on Electron Devices 69 (2), 495-499, 2021 | 9 | 2021 |
| Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio D Anandan, V Nagarajan, RK Kakkerla, HW Yu, HL Ko, SK Singh, CT Lee, ... Journal of Crystal Growth 522, 30-36, 2019 | 9 | 2019 |
| Sub-10 nm top width nanowire InGaAs gate-all-around MOSFETs with improved subthreshold characteristics and device reliability HL Ko, QH Luc, P Huang, JY Wu, SM Chen, NA Tran, HT Hsu, EY Chang IEEE Journal of the Electron Devices Society 10, 188-191, 2022 | 8 | 2022 |
| Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes HL Ko, QH Luc, P Huang, SM Chen, JY Wu, NA Tran, EY Chang IEEE Transactions on Electron Devices 69 (8), 4183-4187, 2022 | 7 | 2022 |
| Investigation of device transport characteristics enhancement of In0. 53Ga0. 47As MOSFET through in situ NH3/N2 remote-plasma treatment P Huang, QH Luc, A Sibaja-Hernandez, CW Hsu, JY Wu, HL Ko, NA Tran, ... AIP Advances 11 (1), 2021 | 6 | 2021 |
| The impact of width downscaling on the high-frequency characteristics of InGaAs nanowire FETs P Huang, QH Luc, A Sibaja-Hernandez, HL Ko, JY Wu, NA Tran, ... IEEE Journal of the Electron Devices Society 10, 854-859, 2022 | 5 | 2022 |
| High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications JY Wu, P Huang, QH Luc, HL Ko, YC Chiang, HC Yu, MY Chen, ... IEEE Transactions on Nanotechnology, 2023 | 4 | 2023 |
| Inversion-Mode In0. 53Ga0. 47 As MOSFET with f T= 275 GHz and high V eff JY Wu, P Huang, QH Luc, HL Ko, YC Chiang, HC Yu, NA Tran, MY Chen, ... Applied Physics Express 16 (4), 041007, 2023 | 1 | 2023 |
| Selective Area Epitaxy of Axial Wurtzite-InAs Nanowire on InGaAs NW by MOCVD D Anandan, EY Chang, HW Yu, HL Ko, V Nagarajan, SK Singh 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | | 2021 |
| VLSI-TSA 2021-2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, PROCEEDINGS S De, WX Bu, BH Qiu, DD Lu, CJ Su, YJ Lee, CH Wu, A Useinov, TL Wu, ... | | 2021 |
| Effectively Suppressed Short Channel Effects Use Nitrogen-Passivated of Ingaas Gate-All-Around Mosfets for High Switching Speed Logic Application HL Ko, QH Luc, SM Chen, P Huang, JY Wu, CW Hsu, NA Tran, EY Chang ECS Meeting Abstracts, 3836, 2020 | | 2020 |
| MOCVD Selective Growth of InAs Nanowires on Patterned Silicon Substrate by Optimizing Gas Flow Rate and Annealing Temperature D Anandan, HW Yu, HL Ko, RK Kakkerla, V Nagarajan, SK Singh, ... | | |
