Layer-controlled CVD growth of large-area two-dimensional MoS 2 films J Jeon, SK Jang, SM Jeon, G Yoo, YH Jang, JH Park, S Lee Nanoscale 7 (5), 1688-1695, 2015 | 494 | 2015 |
Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O) S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee Nanoscale 7 (46), 19390-19396, 2015 | 340 | 2015 |
Dye-Sensitized MoS2 Photodetector with Enhanced Spectral Photoresponse SH Yu, Y Lee, SK Jang, J Kang, J Jeon, C Lee, JY Lee, H Kim, E Hwang, ... ACS nano 8 (8), 8285-8291, 2014 | 326 | 2014 |
A platform for large‐scale graphene electronics–CVD growth of single‐layer graphene on CVD‐grown hexagonal boron nitride M Wang, SK Jang, WJ Jang, M Kim, SY Park, SW Kim, SJ Kahng, JY Choi, ... Advanced Materials 25 (19), 2746-2752, 2013 | 311 | 2013 |
High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ... Advanced Materials 28 (32), 6985-6992, 2016 | 237 | 2016 |
Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties J Jia, SK Jang, S Lai, J Xu, YJ Choi, JH Park, S Lee ACS nano 9 (9), 8729-8736, 2015 | 200 | 2015 |
Synthesis and characterization of hexagonal boron nitride as a gate dielectric SK Jang, J Youn, YJ Song, S Lee Scientific reports 6 (1), 30449, 2016 | 173 | 2016 |
Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ... ACS nano 9 (2), 1099-1107, 2015 | 166 | 2015 |
n-and p-type doping phenomenon by artificial DNA and M-DNA on two-dimensional transition metal dichalcogenides HY Park, SR Dugasani, DH Kang, J Jeon, SK Jang, S Lee, Y Roh, ... ACS nano 8 (11), 11603-11613, 2014 | 101 | 2014 |
Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation HY Park, MH Lim, J Jeon, G Yoo, DH Kang, SK Jang, MH Jeon, Y Lee, ... ACS nano 9 (3), 2368-2376, 2015 | 72 | 2015 |
HfO 2/HfS 2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS 2 S Lai, S Byeon, SK Jang, J Lee, BH Lee, JH Park, YH Kim, S Lee Nanoscale 10 (39), 18758-18766, 2018 | 63 | 2018 |
In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition Q Wu, SK Jang, S Park, SJ Jung, H Suh, YH Lee, S Lee, YJ Song Nanoscale 7 (17), 7574-7579, 2015 | 62 | 2015 |
Self-assembled layer (SAL)-based doping on black phosphorus (BP) transistor and photodetector DH Kang, MH Jeon, SK Jang, WY Choi, KN Kim, J Kim, S Lee, GY Yeom, ... ACS Photonics 4 (7), 1822-1830, 2017 | 57 | 2017 |
Observation of spatially-varying Fermi velocity in strained-graphene directly grown on hexagonal boron nitride WJ Jang, H Kim, YR Shin, M Wang, SK Jang, M Kim, S Lee, SW Kim, ... Carbon 74, 139-145, 2014 | 43 | 2014 |
Organic field-effect transistors integrated with Ti 2 CT x electrodes S Lai, SK Jang, JH Cho, S Lee Nanoscale 10 (11), 5191-5197, 2018 | 34 | 2018 |
Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low … DH Kang, WY Choi, H Woo, S Jang, HY Park, J Shim, JW Choi, S Kim, ... ACS applied materials & interfaces 9 (32), 27073-27082, 2017 | 31 | 2017 |
Logic device based on skyrmion annihilation M Song, MG Park, S Ko, SK Jang, M Je, KJ Kim IEEE Transactions on Electron Devices 68 (4), 1939-1943, 2021 | 30 | 2021 |
Effects of dielectric material properties on graphene transistor performance SK Jang, J Jeon, SM Jeon, YJ Song, S Lee Solid-State Electronics 109, 8-11, 2015 | 30 | 2015 |
Lysozyme-Templated Meso-Macroporous Hollow TiO2 for Lithium Ion Battery Anode MS Salman, AR Park, MJ Cha, Y Choi, SK Jang, L Tan, PJ Yoo, WS Choe ACS Applied Nano Materials 1 (2), 698-710, 2018 | 29 | 2018 |
Homogeneous platinum diselenide metal/semiconductor coplanar structure fabricated by selective thickness control Y Yang, SK Jang, H Choi, J Xu, S Lee Nanoscale 11 (44), 21068-21073, 2019 | 28 | 2019 |