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Juan G Lozano
Juan G Lozano
Departamento de Ingeniería y Ciencia de los Materiales y del Transporte, Universidad de Sevilla
在 us.es 的电子邮件经过验证
标题
引用次数
引用次数
年份
Superstructure control of first-cycle voltage hysteresis in oxygen-redox cathodes
RA House, U Maitra, MA Pérez-Osorio, JG Lozano, L Jin, JW Somerville, ...
Nature 577 (7791), 502-508, 2020
5502020
Oxygen redox chemistry without excess alkali-metal ions in Na2/3[Mg0.28Mn0.72]O2
U Maitra, RA House, JW Somerville, N Tapia-Ruiz, JG Lozano, N Guerrini, ...
Nature chemistry 10 (3), 288-295, 2018
4922018
Degradation Mechanisms at the Li10GeP2S12/LiCoO2 Cathode Interface in an All-Solid-State Lithium-Ion Battery
W Zhang, FH Richter, SP Culver, T Leichtweiss, JG Lozano, C Dietrich, ...
ACS applied materials & interfaces 10 (26), 22226-22236, 2018
2882018
Nature of the “Z”-phase in layered Na-ion battery cathodes
JW Somerville, A Sobkowiak, N Tapia-Ruiz, J Billaud, JG Lozano, ...
Energy & Environmental Science 12 (7), 2223-2232, 2019
1962019
What triggers oxygen loss in oxygen redox cathode materials?
RA House, U Maitra, L Jin, JG Lozano, JW Somerville, NH Rees, ...
Chemistry of Materials 31 (9), 3293-3300, 2019
1752019
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
V Lebedev, V Cimalla, T Baumann, O Ambacher, FM Morales, JG Lozano
Journal of applied physics 100 (9), 2006
1002006
Determination of the composition of InxGa1− xN from strain measurements
FM Morales, D González, JG Lozano, R García, S Hauguth-Frank, ...
Acta Materialia 57 (19), 5681-5692, 2009
922009
Charging Mechanism of Li2MnO3
N Guerrini, L Jin, JG Lozano, K Luo, A Sobkowiak, K Tsuruta, F Massel, ...
Chemistry of Materials 32 (9), 3733-3740, 2020
832020
Low-dose aberration-free imaging of Li-rich cathode materials at various states of charge using electron ptychography
JG Lozano, GT Martinez, L Jin, PD Nellist, PG Bruce
Nano letters 18 (11), 6850-6855, 2018
752018
Imaging screw dislocations at atomic resolution by aberration-corrected electron optical sectioning
H Yang, JG Lozano, TJ Pennycook, L Jones, PB Hirsch, PD Nellist
Nature Communications 6 (1), 7266, 2015
742015
Depth-dependent oxygen redox activity in lithium-rich layered oxide cathodes
AJ Naylor, E Makkos, J Maibach, N Guerrini, A Sobkowiak, E Björklund, ...
Journal of Materials Chemistry A 7 (44), 25355-25368, 2019
712019
The role of Ni and Co in suppressing O‐loss in Li‐rich layered cathodes
E Boivin, N Guerrini, RA House, JG Lozano, L Jin, GJ Rees, ...
Advanced Functional Materials 31 (2), 2003660, 2021
692021
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ...
Journal of applied physics 100 (9), 2006
662006
Interdiffusion and barrier layer formation in thermally evaporated Mn/Cu heterostructures on SiO2 substrates
JG Lozano, S Lozano-Perez, J Bogan, YC Wang, B Brennan, PD Nellist, ...
Applied Physics Letters 98 (12), 2011
462011
Misfit relaxation of InN quantum dots: Effect of the GaN capping layer
JG Lozano, AM Sánchez, R García, D Gonzalez, O Briot, S Ruffenach
Applied physics letters 88 (15), 2006
462006
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
JM Mánuel, FM Morales, JG Lozano, D González, R García, T Lim, ...
Acta Materialia 58 (12), 4120-4125, 2010
432010
Coalescence aspects of III-nitride epitaxy
V Lebedev, K Tonisch, F Niebelschütz, V Cimalla, D Cengher, I Cimalla, ...
Journal of Applied Physics 101 (5), 2007
432007
The dissociation of the [a+ c] dislocation in GaN
PB Hirsch, JG Lozano, S Rhode, MK Horton, MA Moram, S Zhang, ...
Philosophical Magazine 93 (28-30), 3925-3938, 2013
402013
Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
JG Lozano, AM Sánchez, R García, D González, D Araújo, S Ruffenach, ...
Applied Physics Letters 87 (26), 2005
402005
Ch. Y. Wang, V. Cimalla, and O. Ambacher
JG Lozano, FM Morales, R García, D González, V Lebedev
Appl. Phys. Lett 90, 091901, 2007
382007
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