| Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung Journal of applied physics 98 (12), 2005 | 546 | 2005 |
| Crystal grain nucleation in amorphous silicon C Spinella, S Lombardo, F Priolo Journal of Applied physics 84 (10), 5383-5414, 1998 | 451 | 1998 |
| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 191 | 2020 |
| Room‐temperature luminescence from Er‐implanted semi‐insulating polycrystalline silicon S Lombardo, SU Campisano, GN Van den Hoven, A Cacciato, A Polman Applied physics letters 63 (14), 1942-1944, 1993 | 151 | 1993 |
| Silicon planar technology for single-photon optical detectors E Sciacca, AC Giudice, D Sanfilippo, F Zappa, S Lombardo, R Consentino, ... IEEE Transactions on Electron Devices 50 (4), 918-925, 2003 | 140 | 2003 |
| The impact of gate-oxide breakdown on SRAM stability R Rodriguez, JH Stathis, BP Linder, S Kowalczyk, CT Chuang, RV Joshi, ... IEEE Electron Device Letters 23 (9), 559-561, 2002 | 137 | 2002 |
| Erbium in oxygen‐doped silicon: Optical excitation GN Van den Hoven, JH Shin, A Polman, S Lombardo, SU Campisano Journal of applied physics 78 (4), 2642-2650, 1995 | 121 | 1995 |
| Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics BP Linder, S Lombardo, JH Stathis, A Vayshenker, DJ Frank IEEE Electron Device Letters 23 (11), 661-663, 2002 | 119 | 2002 |
| How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ... IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003 | 114 | 2003 |
| Microscopy study of the conductive filament in HfO2 resistive switching memory devices S Privitera, G Bersuker, B Butcher, A Kalantarian, S Lombardo, ... Microelectronic Engineering 109, 75-78, 2013 | 111 | 2013 |
| Silicon nanocrystal memories S Lombardo, B De Salvo, C Gerardi, T Baron Microelectronic Engineering 72 (1-4), 388-394, 2004 | 111 | 2004 |
| Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ... Applied Physics Letters 83 (11), 2223-2225, 2003 | 110 | 2003 |
| Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ... IEEE Transactions on Device and Materials reliability 4 (3), 377-389, 2004 | 104 | 2004 |
| Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi Journal of applied physics 86 (11), 6382-6391, 1999 | 99 | 1999 |
| Erbium in oxygen‐doped silicon: Electroluminescence S Lombardo, SU Campisano, GN Van den Hoven, A Polman Journal of applied physics 77 (12), 6504-6510, 1995 | 84 | 1995 |
| Growth and scaling of oxide conduction after breakdown BP Linder, JH Stathis, DJ Frank, S Lombardo, A Vayshenker 2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003 | 75 | 2003 |
| Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors S Lombardo, F Crupi, A La Magna, C Spinella, A Terrasi, A La Mantia, ... Journal of applied physics 84 (1), 472-479, 1998 | 68 | 1998 |
| Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics J Buckley, B De Salvo, D Deleruyelle, M Gely, G Nicotra, S Lombardo, ... Microelectronic Engineering 80, 210-213, 2005 | 67 | 2005 |
| Dark current in silicon photomultiplier pixels: Data and model R Pagano, D Corso, S Lombardo, G Valvo, DN Sanfilippo, G Fallica, ... IEEE transactions on electron devices 59 (9), 2410-2416, 2012 | 65 | 2012 |
| Conductive filament structure in HfO2 resistive switching memory devices S Privitera, G Bersuker, S Lombardo, C Bongiorno, DC Gilmer Solid-State Electronics 111, 161-165, 2015 | 61 | 2015 |
Cosimo GerardiHead of Innovation - Chief Technology Officer - 3SUN Gigafactory - Enel Green Power在 enel.com 的电子邮件经过验证
Cosimo GerardiHead of Innovation - Chief Technology Officer - 3SUN Gigafactory - Enel Green Power在 enel.com 的电子邮件经过验证