Application of workfunction engineering in vertical superjunction devices P Nautiyal, A Naugarhiya, S Verma Superlattices and Microstructures 109, 927-935, 2017 | 17 | 2017 |
Strained superjunction U-MOSFET with insulating layer between alternate pillars P Nautiyal, A Naugarhiya, S Verma Materials Research Express 6 (4), 046424, 2019 | 10 | 2019 |
Workfunction engineered stepped gate SJ UMOS with reduced specific resistance for high speed applications P Nautiyal, A Naugarhiya, S Verma Semiconductor Science and Technology 34 (9), 095016, 2019 | 6 | 2019 |
Electrical characteristic investigation of variation vertical doping superjunction UMOS P Nautiyal, A Agrawal, S Kumari, H Sahu, A Naugarhiya, S Verma 2019 IEEE 16th India Council International Conference (INDICON), 1-4, 2019 | 5 | 2019 |
An assessment of step patterned gate oxide superjunction trench mosfet for potential benefits P Nautiyal, A Naugarhiya, S Verma Journal of Electronic Materials 48, 8156-8162, 2019 | 5 | 2019 |
Charge plasma based vvd-sj vdmos employing reversed doping concentration P Nautiyal, A Naugarhiya, S Verma 2018 Second International Conference on Advances in Electronics, Computers …, 2018 | 4 | 2018 |
An improved SJ UMOS with modified gate electrode to reduce gate charge PK Kushwaha, P Nautiyal, A Gupta, A Naugarhiya, S Verma 2019 9th Annual Information Technology, Electromechanical Engineering and …, 2019 | 3 | 2019 |
Performance evaluation of superjunction UMOS with dual polysilicon gate P Nautiyal, A Naugarhiya, S Verma Materials Today: Proceedings 46, 4546-4552, 2021 | 2 | 2021 |
Capacitive Analysis of Strained Superjunction Vertical Single Diffused MOSFET O Parmar, P Nautiyal, A Naugarhiya 2021 Devices for Integrated Circuit (DevIC), 139-142, 2021 | 1 | 2021 |
Design and performance projection of workfunction engineered variable vertical doped superjunction vertical single diffused mos P Nautiyal, O Parmar, A Naugarhiya, S Verma 2018 IEEE International Conference on Electronics, Computing and …, 2018 | 1 | 2018 |