Atom‐by‐atom fabrication of single and few dopant quantum devices J Wyrick, X Wang, RV Kashid, P Namboodiri, SW Schmucker, ... Advanced Functional Materials 29 (52), 1903475, 2019 | 56 | 2019 |
Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots X Wang, E Khatami, F Fei, J Wyrick, P Namboodiri, R Kashid, AF Rigosi, ... Nature Communications 13 (1), 6824, 2022 | 46 | 2022 |
Atomic-scale control of tunneling in donor-based devices X Wang, J Wyrick, RV Kashid, P Namboodiri, SW Schmucker, A Murphy, ... Communications Physics 3 (1), 82, 2020 | 27 | 2020 |
High resolution thickness measurements of ultrathin Si: P monolayers using weak localization JA Hagmann, X Wang, P Namboodiri, J Wyrick, R Murray, MD Stewart, ... Applied Physics Letters 112 (4), 2018 | 27 | 2018 |
Quantifying atom-scale dopant movement and electrical activation in Si: P monolayers X Wang, JA Hagmann, P Namboodiri, J Wyrick, K Li, RE Murray, A Myers, ... Nanoscale 10 (9), 4488-4499, 2018 | 25 | 2018 |
Enhanced atomic precision fabrication by adsorption of phosphine into engineered dangling bonds on H–Si using STM and DFT J Wyrick, X Wang, P Namboodiri, RV Kashid, F Fei, J Fox, R Silver ACS nano 16 (11), 19114-19123, 2022 | 22 | 2022 |
Atom-by-atom construction of a cyclic artificial molecule in silicon J Wyrick, X Wang, P Namboodiri, SW Schmucker, RV Kashid, RM Silver Nano letters 18 (12), 7502-7508, 2018 | 20 | 2018 |
Calculating hyperfine couplings in large ionic crystals containing hundreds of QM atoms: Subsystem DFT is the key R Kevorkyants, X Wang, DM Close, M Pavanello The Journal of Physical Chemistry B 117 (45), 13967-13974, 2013 | 17 | 2013 |
STM patterned nanowire measurements using photolithographically defined implants in Si (100) AN Ramanayaka, HS Kim, K Tang, X Wang, RM Silver, MD Stewart Jr, ... Scientific reports 8 (1), 1790, 2018 | 16 | 2018 |
Silicon epitaxy on H-terminated Si (100) surfaces at 250 C X Deng, P Namboodiri, K Li, X Wang, G Stan, AF Myers, X Cheng, T Li, ... Applied surface science 378, 301-307, 2016 | 16 | 2016 |
Low-Resistance, High-Yield Electrical Contacts to Atom Scale Devices Using Palladium Silicide SW Schmucker, PN Namboodiri, R Kashid, X Wang, B Hu, JE Wyrick, ... Physical review applied 11 (3), 034071, 2019 | 14 | 2019 |
Spatially resolved scanning tunneling spectroscopy of single-layer steps on Si (100) surfaces X Wang, P Namboodiri, K Li, X Deng, R Silver Physical Review B 94 (12), 125306, 2016 | 8 | 2016 |
Electron-electron interactions in low-dimensional Si: P delta layers JA Hagmann, X Wang, R Kashid, P Namboodiri, J Wyrick, SW Schmucker, ... Physical Review B 101 (24), 245419, 2020 | 3 | 2020 |
Atomic precision fabrication of quantum devices down to the single atom regime RM Silver, X Wang, F Fei, J Wyrick, R Kashid, P Namboodiri Novel Patterning Technologies 2021 11610, 1161018, 2021 | 2 | 2021 |
Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions DP Pappas, M Field, C Kopas, JA Howard, X Wang, E Lachman, L Zhou, ... arXiv preprint arXiv:2401.07415, 2024 | 1 | 2024 |
Atomic-scale control of tunnel coupling X Wang, J Wyrick, RV Kashid, P Namboodiri, SW Schmucker, A Murphy, ... arXiv preprint arXiv:1905.00132, 2019 | 1 | 2019 |
Towards single atom devices: weak localization in embedded phosphorus delta layers in silicon J Hagmann, X Wang, P Namboodiri, J Wyrick, R Murray, MD Stewart, ... APS March Meeting Abstracts 2017, A28. 002, 2017 | 1 | 2017 |
Accurate Hyperfine Coupling Calculations of Radiation Induced DNA Constituent Radicals Using Density Functional Theory. X Wang | 1 | 2013 |
DC to GHz measurements of a near-ideal 2D material: P+ monolayers NM Zimmerman, A Levy, P Namboodiri, JM Pomeroy, X Wang, J Fox, ... Neil M. Zimmerman, Antonio Levy, Pradeep Namboodiri, Joshua M. Pomeroy …, 2024 | | 2024 |
Probing Localized Charge States in Atom-based Silicon Quantum dot Arrays using RF Reflectometry F Fei, X Wang, E Khatami, J Wyrick, P Namboodiri, FNU Utsav, B Courts, ... Bulletin of the American Physical Society, 2024 | | 2024 |