| Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma JW Kwon, S Ryu, J Park, H Lee, Y Jang, S Park, GH Kim Materials 14 (11), 3005, 2021 | 23 | 2021 |
| Characteristics of a plasma information variable in phenomenology-based, statistically-tuned virtual metrology to predict silicon dioxide etching depth Y Jang, HJ Roh, S Park, S Jeong, S Ryu, JW Kwon, NK Kim, GH Kim Current Applied Physics 19 (10), 1068-1075, 2019 | 16 | 2019 |
| Plasma information-based virtual metrology (PI-VM) and mass production process control S Park, J Seong, Y Jang, HJ Roh, JW Kwon, J Lee, S Ryu, J Song, ... Journal of the Korean Physical Society 80 (8), 647-669, 2022 | 12 | 2022 |
| Population kinetics modeling of low-temperature argon plasma HK Chung, MY Song, JW Kwon, MG Lee, J Park, N Bae, J Song, GH Kim, ... Atoms 9 (4), 100, 2021 | 7 | 2021 |
| Investigation of ion collision effect on electrostatic sheath formation in weakly ionized and weakly collisional plasma H Lee, NK Kim, MG Lee, JW Kwon, SH Son, N Bae, T Park, S Park, ... Plasma Sources Science and Technology 31 (8), 084006, 2022 | 5 | 2022 |
| Development of model predictive control of fluorine density in SF6/O2/Ar etch plasma by oxygen flow rate S Ryu, JW Kwon, J Park, I Lee, S Park, GH Kim Current Applied Physics 36, 183-186, 2022 | 4 | 2022 |
| Analysis of First Wafer Effect for Si Etch Rate with Plasma Information Based Virtual Metrology S Ryu, JW Kwon Journal of the Semiconductor & Display Technology 20 (4), 146-150, 2021 | 2 | 2021 |
| Analysis of Electron Thermal Properties in Ar/O2 Inductively Coupled Plasmas: A Global Model Simulation Using Langmuir Probe Data H Seo, H Lee, JW Kwon, G Kim, I Lee, GH Kim Current Applied Physics, 2024 | | 2024 |
| Application of Plasma Information-Based Virtual Metrology (PI-VM) for Etching in C4F8/Ar/O2 Plasma G Kim, JW Kwon, I Lee, H Seo, JB Park, JH Shin, GH Kim IEEE Transactions on Semiconductor Manufacturing, 2024 | | 2024 |
| OES-based Monitoring Method of Non-maxwellian EEDF and Radical Density for Etch Process Control in Ar/SF6/O2 VHF-CCP JW Kwon, J Park, I Lee, GH Kim APS Annual Gaseous Electronics Meeting Abstracts, FT1. 005, 2023 | | 2023 |
| Investigation of ion collision effect on electrostatic plasma-sheath transition in weakly ionized and weakly collisional discharge H Lee, NK Kim, MG Lee, JW Kwon, SH Son, N Bae, T Park, S Park, ... APS Annual Gaseous Electronics Meeting Abstracts, ET3. 006, 2023 | | 2023 |
| Phenomenology-based model predictive control of electron density in Ar/SF6 capacitively coupled etch plasma S Ryu, JW Kwon, I Lee, J Park, GH Kim Journal of the Korean Physical Society 80 (3), 233-240, 2022 | | 2022 |
| Development of Polygonal Model for Shape-Deformation Analysis of Amorphous Carbon Hard Mask in High-Density Etching Plasma J Song, N Bae, J Park, S Ryu, JW Kwon, T Park, I Lee, DC Kim, JS Kim, ... Journal of the Semiconductor & Display Technology 21 (4), 53-58, 2022 | | 2022 |
| Development of virtual metrology using plasma information to predict mask shape in HAR etch process J Song, N Bae, J Park, T Park, JW Kwon, S Ryu, I Lee, GH Kim APS Annual Gaseous Electronics Meeting Abstracts, ER2. 004, 2022 | | 2022 |
| Dipti; Ralchenko, Y. Population Kinetics Modeling of Low-Temperature Argon Plasma. Atoms 2021, 9, 100 HK Chung, MY Song, JW Kwon, MG Lee, J Park, N Bae, J Song, GH Kim Electron Scattering in Gases, 17, 2021 | | 2021 |
| Influence of Wall Conditioning State on AR Plasma Emission in a Processing Chamber J Song, J Kim, DC Kim, MY Song, JS Yoon, SH Son, JW Kwon, S Ryu, ... 2020 IEEE International Conference on Plasma Science (ICOPS), 95-95, 2020 | | 2020 |
| Investigation of Ge2Sb2Te5 Etching Damage by Halogen Plasmas YC Jang, CY Yoo, S Ryu, JW Kwon, GH Kim Journal of the Semiconductor & Display Technology 18 (4), 35-39, 2019 | | 2019 |
| Real-time Etch Control to Reduce First Wafer Effect in SF6/O2/Ar Plasma S Ryu, Y Jang, JW Kwon, D Park, JM Lee, GH Kim 2018 International Symposium on Semiconductor Manufacturing (ISSM), 1-4, 2018 | | 2018 |
