| Luminescence of the semimagnetic semiconductor CdMnTe in the wavelength range 370–400 nm at high excitation levels IG Aksyanov, ME Kompan, MV Mesh Physics of the Solid State 49, 691-695, 2007 | 6 | 2007 |
| High-temperature annealing of bulk GaN layers VN Bessolov, YV Zhilyaev, ME Kompan, EV Konenkova, SA Kukushkin, ... Technical Physics Letters 28, 994-996, 2002 | 6 | 2002 |
| Application of Atomic Layer Deposition for the Formation of Nanostructured ITO/Al2O3 Coatings LK Markov, AS Pavluchenko, IP Smirnova, MV Mesh, DS Kolokolov Semiconductors 55 (4), 438-445, 2021 | 5 | 2021 |
| Dependence of GaN photoluminescence on the excitation intensity VN Bessolov, VV Evstropov, ME Kompan, MV Mesh Semiconductors 36, 1128-1131, 2002 | 4 | 2002 |
| Application of atomic layer deposition for obtaining nanostructured ITO/AlO coatings LK Markov, AS Pavluchenko, IP Smirnova, MV Mesh, DS Kolokolov Fizika i Tekhnika Poluprovodnikov 55 (4), 365-372, 2021 | 1 | 2021 |
| Luminescence of CdMnTe semimagnetic semiconductor in a 370-400 nm wave length range at high excitation levels IG Aksyanov, ME Kompan, MV Mesh Fizika Tverdogo Tela 49 (4), 657-661, 2007 | 1 | 2007 |
| Photoluminescence of GaN: dependence on excitation intensity; Fotolyuminestsentsiya GaN: zavisimost'ot intensivnosti vozbuzhdeniya VN Bessolov, VV Evstropov, ME Kompan, MV Mesh Fizika i Tekhnika Poluprovodnikov 36, 2002 | | 2002 |
| Zns: Mn Electroluminescent Display Based on Nanostructured Indium Tin Oxide Films AS Pavluchenko, LK Markov, IP Smirnova, VV Aksenova, M Mesh, ... Available at SSRN 4861640, 0 | | |
