| Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998 | 322 | 1998 |
| Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001) Q Xie, A Kalburge, P Chen, A Madhukar Photonics Technology Lett 8, 965, 1996 | 217* | 1996 |
| Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs R Heitz, TR Ramachandran, A Kalburge, Q Xie, I Mukhametzhanov, ... Physical review letters 78 (21), 4071, 1997 | 215 | 1997 |
| Realization of optically active strained InAs island quantum boxes on GaAs (100) via molecular beam epitaxy and the role of island induced strain fields Q Xie, P Chen, A Kalburge, TR Ramachandran, A Nayfonov, A Konkar, ... Journal of crystal growth 150, 357-363, 1995 | 147 | 1995 |
| Ultra high speed SiGe NPN for advanced BiCMOS technology M Racanelli, K Schuegraf, A Kalburge, A Kar-Roy, B Shen, C Hu, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 96 | 2001 |
| Strained coherent InAs quantum box islands on GaAs (100): Size equalization, vertical self‐organization, and optical properties Q Xie, NP Kobayashi, TR Ramachandran, A Kalburge, P Chen, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 69 | 1996 |
| Nature of Stranski–Krastanow growth of InAs on GaAs (001) TR Ramachandran, A Madhukar, I Mukhametzhanov, R Heitz, A Kalburge, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 59 | 1998 |
| Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same AM Kalburge US Patent 7,858,454, 2010 | 43 | 2010 |
| Hot carrier relaxation in InAs/GaAs quantum dots R Heitz, M Veit, A Kalburge, Q Xie, M Grundmann, P Chen, NN Ledentsov, ... Physica E: Low-dimensional Systems and Nanostructures 2 (1-4), 578-582, 1998 | 35 | 1998 |
| BC35: a 0.35/spl mu/m, 30 GHz production RF BiCMOS technology M Racanelli, Z Zhang, J Zheng, A Kar-Roy, P Joshi, A Kalburge, ... Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat …, 1999 | 28 | 1999 |
| Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski—Krastanow growth: InAs on GaAs (001) TR Ramachandran, R Heitz, NP Kobayashi, A Kalburge, W Yu, P Chen, ... Journal of crystal growth 175, 216-223, 1997 | 24* | 1997 |
| Method for integrating nanotube devices with CMOS for RF/analog SoC applications AM Kalburge US Patent 7,871,851, 2011 | 22 | 2011 |
| Focused ion beam assisted chemically etched mesas on GaAs (001) and the nature of subsequent molecular beam epitaxial growth A Kalburge, A Konkar, TR Ramachandran, P Chen, A Madhukar Journal of applied physics 82 (2), 859-864, 1997 | 22 | 1997 |
| 0.18/spl mu/m SiGe BiCMOS technology for wireless and 40 Gb/s communication products K Schuegraf, M Racanelli, A Kalburge, B Shen, C Hu, D Chapek, ... Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2001 | 19 | 2001 |
| Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs (100) substrates by molecular‐beam epitaxy Q Xie, A Konkar, A Kalburge, TR Ramachandran, P Chen, R Cartland, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 17 | 1995 |
| CMOS Compatible Method of Forming Source/Drain Contacts for Self-Aligned Nanotube Devices AM Kalburge US Patent App. 12/124,827, 2008 | 16 | 2008 |
| Integrated Nanotube and CMOS Devices For System-On-Chip (SoC) Applications and Method for Forming The Same AM Kalburge US Patent App. 12/125,319, 2009 | 15 | 2009 |
| Method for forming deep trench isolation and related structure KQ Yin, A Kalburge US Patent 7,015,115, 2006 | 13 | 2006 |
| Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structure PD Hurwitz, KM Ring, C Hu, A Kalburge US Patent 6,933,202, 2005 | 10 | 2005 |
| Method for forming CMOS transistor spacers in a BiCMOS process KQ Yin, AM Kalburge, KF Schuegraf US Patent 6,830,967, 2004 | 9 | 2004 |
