| Effective mass of electron in monolayer graphene: Electron-phonon interaction E Tiras, S Ardali, T Tiras, E Arslan, S Cakmakyapan, O Kazar, J Hassan, ... Journal of Applied Physics 113 (4), 2013 | 84 | 2013 |
| Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN O Celik, E Tiras, S Ardali, S Lisesivdin, E Ozbay Open Physics 10 (2), 485-491, 2012 | 25 | 2012 |
| Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, F Nutku, Ç Cetinkaya, ... Semiconductor Science and Technology 35 (2), 025009, 2020 | 17 | 2020 |
| Determination of the in‐plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs O Celik, E Tiras, S Ardali, SB Lisesivdin, E Ozbay physica status solidi c 8 (5), 1625-1628, 2011 | 17 | 2011 |
| The variation of temperature‐dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation S Ardali, G Atmaca, SB Lisesivdin, T Malin, V Mansurov, K Zhuravlev, ... physica status solidi (b) 252 (9), 1960-1965, 2015 | 15 | 2015 |
| Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures HM Khalil, S Mazzucato, S Ardali, O Celik, S Mutlu, B Royall, E Tiras, ... Materials Science and Engineering: B 177 (10), 729-733, 2012 | 15 | 2012 |
| Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs quantum wells E Tiras, N Balkan, S Ardali, M Gunes, C Fontaine, A Arnoult Philosophical Magazine 91 (4), 628-639, 2011 | 14 | 2011 |
| Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures E Tiras, O Celik, S Mutlu, S Ardali, SB Lisesivdin, E Ozbay Superlattices and Microstructures 51 (6), 733-744, 2012 | 13 | 2012 |
| SiC Substrate effects on electron transport in the epitaxial graphene layer E Arslan, S Cakmakyapan, Ö Kazar, S Bütün, SB Lişesivdin, NA Cinel, ... Electronic Materials Letters 10, 387-391, 2014 | 10 | 2014 |
| Energy relaxation rates in AlInN/AlN/GaN heterostructures E Tiras, S Ardali, E Arslan, E Ozbay Journal of electronic materials 41, 2350-2361, 2012 | 10 | 2012 |
| Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate F Sonmez, E Arslan, S Ardali, E Tiras, E Ozbay Journal of Alloys and Compounds, 2021 | 9 | 2021 |
| The transport properties of Dirac fermions in chemical vapour-deposited single-layer graphene E Arslan, Ş Ardalı, E Tıraş, S Çakmakyapan, E Özbay PhilosoPhical Magazine 97 (3), 187-200, 2017 | 9 | 2017 |
| Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra E Tiras, M Tanisli, N Balkan, S Ardali, E Iliopoulos, A Georgakilas physica status solidi (b) 249 (6), 1235-1240, 2012 | 9 | 2012 |
| Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures O Donmez, M Aydın, Ş Ardalı, S Yıldırım, E Tıraş, A Erol, J Puustinen, ... Semiconductor Science and Technology 35 (9), 095038, 2020 | 8 | 2020 |
| Electron and hole energy relaxation rates in GaInNAs/GaAs quantum wells via deformation potential and piezoelectric scattering E Tiras, S Ardali physica status solidi (b) 250 (1), 134-146, 2013 | 8 | 2013 |
| Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells S Ardali, E Tiras Physica E: Low-dimensional Systems and Nanostructures 47, 207-216, 2013 | 8 | 2013 |
| Contactless electron effective mass determination in GaInNAs/GaAs quantum wells E Tiras, S Ardali The European Physical Journal B 86, 1-7, 2013 | 8 | 2013 |
| Longitudinal polar optical phonons in InN/GaN single and double het‐erostructures S Ardali, E Tiras, M Gunes, N Balkan, AO Ajagunna, E Iliopoulos, ... physica status solidi c 8 (5), 1620-1624, 2011 | 8 | 2011 |
| The effect of barrier layers on 2D electron effective mass in Al0. 3Ga0. 7N/AlN/GaN heterostructures F Sonmez, S Ardali, SB Lisesivdin, T Malin, V Mansurov, K Zhuravlev, ... Journal of Physics: Condensed Matter 33 (25), 255501, 2021 | 6 | 2021 |
| Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer G Atmaca, S Ardali, E Tiras, T Malin, VG Mansurov, KS Zhuravlev, ... Solid-State Electronics 118, 12-17, 2016 | 6 | 2016 |
Engin TIRASEskisehir Technical University在 eskisehir.edu.tr 的电子邮件经过验证
