| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 905 | 2011 |
| Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 E Scalise, M Houssa, G Pourtois, V Afanas’ ev, A Stesmans Nano Research 5, 43-48, 2012 | 748 | 2012 |
| Electronic properties of hydrogenated silicene and germanene M Houssa, E Scalise, K Sankaran, G Pourtois, VV Afanas’Ev, A Stesmans Applied Physics Letters 98 (22), 2011 | 498 | 2011 |
| Interchain vs. intrachain energy transfer in acceptor-capped conjugated polymers D Beljonne, G Pourtois, C Silva, E Hennebicq, LM Herz, RH Friend, ... Proceedings of the National Academy of Sciences 99 (17), 10982-10987, 2002 | 439 | 2002 |
| Spin− orbit coupling and intersystem crossing in conjugated polymers: a configuration interaction description D Beljonne, Z Shuai, G Pourtois, JL Bredas The Journal of Physical Chemistry A 105 (15), 3899-3907, 2001 | 400 | 2001 |
| Bandgap opening in oxygen plasma-treated graphene A Nourbakhsh, M Cantoro, T Vosch, G Pourtois, F Clemente, ... Nanotechnology 21 (43), 435203, 2010 | 380 | 2010 |
| Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ... Journal of The Electrochemical Society 155 (7), H552, 2008 | 343 | 2008 |
| Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ... Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006 | 329 | 2006 |
| Exciton migration in rigid-rod conjugated polymers: an improved Förster model E Hennebicq, G Pourtois, GD Scholes, LM Herz, DM Russell, C Silva, ... Journal of the American Chemical Society 127 (13), 4744-4762, 2005 | 327 | 2005 |
| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 299 | 2009 |
| Mechanical and electronic properties of thin‐film transistors on plastic, and their integration in flexible electronic applications P Heremans, AK Tripathi, A de Jamblinne de Meux, ECP Smits, B Hou, ... Advanced Materials 28 (22), 4266-4282, 2016 | 268 | 2016 |
| Can silicon behave like graphene? A first-principles study M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans Applied Physics Letters 97 (11), 2010 | 265 | 2010 |
| Alternating Oligo(p-phenylene vinylene)−Perylene Bisimide Copolymers: Synthesis, Photophysics, and Photovoltaic Properties of a New Class of Donor … EE Neuteboom, SCJ Meskers, PA Van Hal, JKJ Van Duren, EW Meijer, ... Journal of the American Chemical Society 125 (28), 8625-8638, 2003 | 253 | 2003 |
| Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ... Applied Physics Letters 104 (9), 2014 | 221 | 2014 |
| Vibrational properties of silicene and germanene E Scalise, E Scalise Vibrational Properties of Defective Oxides and 2D Nanolattices: Insights …, 2014 | 189 | 2014 |
| Thickness dependence of the resistivity of platinum-group metal thin films S Dutta, K Sankaran, K Moors, G Pourtois, S Van Elshocht, J Bömmels, ... Journal of Applied Physics 122 (2), 2017 | 187 | 2017 |
| Photoinduced electron-transfer processes along molecular wires based on phenylenevinylene oligomers: a quantum-chemical insight G Pourtois, D Beljonne, J Cornil, MA Ratner, JL Brédas Journal of the American Chemical Society 124 (16), 4436-4447, 2002 | 170 | 2002 |
| Electronic properties of two-dimensional hexagonal germanium M Houssa, G Pourtois, VV Afanas’Ev, A Stesmans Applied Physics Letters 96 (8), 2010 | 154 | 2010 |
| First-principles study of strained 2D MoS2 E Scalise, M Houssa, G Pourtois, VV Afanas, A Stesmans Physica E: Low-dimensional Systems and Nanostructures 56, 416-421, 2014 | 152 | 2014 |
| Ge dangling bonds at the (100) Ge/GeO2 interface and the viscoelastic properties of GeO2 M Houssa, G Pourtois, M Caymax, M Meuris, MM Heyns, VV Afanas’Ev, ... Applied Physics Letters 93 (16), 2008 | 150 | 2008 |
