Dopants adsorbed as single atoms prevent degradation of catalysts S Wang, AY Borisevich, SN Rashkeev, MV Glazoff, K Sohlberg, ... Nature Materials 3 (3), 143-146, 2004 | 271 | 2004 |
Bonding at the Interface and the Effects of Nitrogen and Hydrogen S Wang, S Dhar, S Wang, AC Ahyi, A Franceschetti, JR Williams, ... Physical review letters 98 (2), 026101, 2007 | 231 | 2007 |
Solvent-mediated charge separation drives alternative hydrogenation path of furanics in liquid water Z Zhao, R Bababrik, W Xue, Y Li, NM Briggs, DT Nguyen, U Nguyen, ... Nature Catalysis 2 (5), 431-436, 2019 | 199 | 2019 |
Atomic-scale dynamics of the formation and dissolution of carbon clusters in SiO2 S Wang, M Di Ventra, SG Kim, ST Pantelides Physical Review Letters 86 (26), 5946, 2001 | 132 | 2001 |
Phase stability, mechanical properties and melting points of high-entropy quaternary metal carbides from first-principles SY Liu, S Zhang, S Liu, DJ Li, Y Li, S Wang Journal of the European Ceramic Society 41 (13), 6267-6274, 2021 | 91 | 2021 |
Generalization of the Thomas-Reiche-Kuhn and the Bethe sum rules S Wang Physical Review A 60 (1), 262, 1999 | 91 | 1999 |
Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface J Rozen, S Dhar, SK Dixit, VV Afanas’ev, FO Roberts, HL Dang, S Wang, ... Journal of Applied Physics 103 (12), 2008 | 88 | 2008 |
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ... Materials science forum 527, 935-948, 2006 | 75 | 2006 |
Effects of device aging on microelectronics radiation response and reliability DM Fleetwood, MP Rodgers, L Tsetseris, XJ Zhou, I Batyrev, S Wang, ... Microelectronics Reliability 47 (7), 1075-1085, 2007 | 63 | 2007 |
Total Dose Radiation Response of Nitrided and Non-nitrided SiO2/4H-SiC MOS Capacitors SK Dixit, S Dhar, J Rozen, S Wang, RD Schrimpf, DM Fleetwood, ... IEEE transactions on nuclear science 53 (6), 3687, 2006 | 57 | 2006 |
Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on YL Wang, HJ Gao, HM Guo, S Wang, ST Pantelides Physical review letters 94 (10), 106101, 2005 | 57 | 2005 |
First-principles calculations for the adsorption of water molecules on the Cu(100) surface S Wang, Y Cao, PA Rikvold Physical Review B 70 (20), 205410, 2004 | 53 | 2004 |
Stability and mechanical properties of single-phase quinary high-entropy metal carbides: First-principles theory and thermodynamics SY Liu, S Zhang, S Liu, DJ Li, Z Niu, Y Li, S Wang Journal of the European Ceramic Society 42 (7), 3089-3098, 2022 | 48 | 2022 |
Diffusion of lithium ions in amorphous and crystalline poly(ethylene oxide)3: LiCF3SO3 polymer electrolytes S Xue, Y Liu, Y Li, D Teeters, DW Crunkleton, S Wang Electrochimica Acta 235, 122-128, 2017 | 42 | 2017 |
First-principles calculations for the elastic properties of nanostructured superhard TiN∕ SixNy superlattices S Wang, R Gudipati, AS Rao, TJ Bostelmann, YG Shen Applied Physics Letters 91 (8), 2007 | 40 | 2007 |
Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC J Rozen, S Dhar, ST Pantelides, LC Feldman, S Wang, JR Williams, ... Applied Physics Letters 91 (15), 2007 | 39 | 2007 |
Thermal donor formation processes in silicon and the catalytic role of hydrogen L Tsetseris, S Wang, ST Pantelides Applied physics letters 88 (5), 2006 | 39 | 2006 |
Ab initio calculations for bromine adlayers on the Ag(100) and Au(100) surfaces: The c(2× 2) structure S Wang, PA Rikvold Physical Review B 65 (15), 155406, 2002 | 37 | 2002 |
The effects of aging on MOS irradiation and annealing response MP Rodgers, DM Fleetwood, RD Schrimpf, IG Batyrev, S Wang, ... IEEE transactions on nuclear science 52 (6), 2642-2648, 2005 | 35 | 2005 |
Structure, Phase Transition, and Electronic Properties of K1−xNaxNbO3 Solid Solutions from First‐Principles Theory SY Liu, S Liu, DJ Li, Y Shen, H Dang, Y Liu, W Xue, S Wang Journal of the American Ceramic Society 97 (12), 4019-4023, 2014 | 34 | 2014 |