| High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ... Advanced Functional Materials 25 (27), 4219-4227, 2015 | 312 | 2015 |
| Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism. J Shim, HS Kim, YS Shim, DH Kang, HY Park, J Lee, J Jeon, SJ Jung, ... Advanced Materials (Deerfield Beach, Fla.) 28 (26), 5293-5299, 2016 | 115 | 2016 |
| Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design. HY Park, WS Jung, DH Kang, J Jeon, G Yoo, Y Park, J Lee, YH Jang, ... Advanced Materials (Deerfield Beach, Fla.) 28 (5), 864-870, 2015 | 102 | 2015 |
| n-and p-type doping phenomenon by artificial DNA and M-DNA on two-dimensional transition metal dichalcogenides HY Park, SR Dugasani, DH Kang, J Jeon, SK Jang, S Lee, Y Roh, ... ACS nano 8 (11), 11603-11613, 2014 | 101 | 2014 |
| Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl) Triethoxysilane and Triphenylphosphine Treatment. SH Jo, HY Park, DH Kang, J Shim, J Jeon, S Choi, M Kim, Y Park, J Lee, ... Advanced Materials (Deerfield Beach, Fla.) 28 (31), 6711-6718, 2016 | 77 | 2016 |
| A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory KH Kim, HY Park, J Shim, G Shin, M Andreev, J Koo, G Yoo, K Jung, ... Nanoscale horizons 5 (4), 654-662, 2020 | 73 | 2020 |
| Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation HY Park, MH Lim, J Jeon, G Yoo, DH Kang, SK Jang, MH Jeon, Y Lee, ... ACS nano 9 (3), 2368-2376, 2015 | 72 | 2015 |
| A neuromorphic device implemented on a salmon‐DNA electrolyte and its application to artificial neural networks DH Kang, JH Kim, S Oh, HY Park, SR Dugasani, BS Kang, C Choi, R Choi, ... Advanced Science 6 (17), 1901265, 2019 | 44 | 2019 |
| Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low … DH Kang, WY Choi, H Woo, S Jang, HY Park, J Shim, JW Choi, S Kim, ... ACS applied materials & interfaces 9 (32), 27073-27082, 2017 | 31 | 2017 |
| Poly-4-vinylphenol and poly (melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics I Lee, HY Park, J Park, G Yoo, MH Lim, J Park, S Rathi, WS Jung, J Kim, ... Nanoscale 6 (7), 3830-3836, 2014 | 29 | 2014 |
| Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter IY Lee, HY Park, JH Park, J Lee, WS Jung, HY Yu, SW Kim, GH Kim, ... Organic Electronics 14 (6), 1586-1590, 2013 | 29 | 2013 |
| Controllable and air-stable graphene n-type doping on phosphosilicate glass for intrinsic graphene HY Park, JS Yoon, J Jeon, J Kim, SH Jo, HY Yu, S Lee, JH Park Organic Electronics 22, 117-121, 2015 | 14 | 2015 |
| Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions SG Jeong, HY Park, MH Lim, WS Jung, HY Yu, Y Roh, JH Park Organic Electronics 13 (9), 1511-1515, 2012 | 6 | 2012 |
| Method of doping 2-dimensional semiconductor JH Park, HY Park US Patent 10,128,126, 2018 | 3 | 2018 |
| Method of forming electrodes for electronic device using two dimensional semiconductor and electronic device thereof JH Park, HY Park, JH Kim, WY Choi US Patent 10,573,774, 2020 | 1 | 2020 |
| Photodetectors: High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping (Adv. Funct. Mater. 27/2015). DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ... Advanced Functional Materials 25 (27), 2015 | 1 | 2015 |
| Controllable Phosphorus Doped Graphene Field Effect Transistor Using Phospho-Silicate Glass Films J Yoon, HY Park, JH Park ECS Transactions 64 (38), 31, 2015 | 1 | 2015 |
| Metal-Graphene Contact Resistance Reduction Through Phosphosilicate Glass-Based n-Type Doping HY Park, JH Park Science of Advanced Materials 10 (5), 678-681, 2018 | | 2018 |
| Method of doping 2-dimensional semiconductor and switching device JH Park, H Park, J Shim, J Lee US Patent 9,570,684, 2017 | | 2017 |
| Graphene transistor having tunable barrier JH Park, J Shim, H Park, J Lee US Patent 9,318,556, 2016 | | 2016 |
