| High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga2O3 Single-Crystal Films T Chen, X Zhang, L Zhang, C Zeng, S Li, A Yang, Y Hu, B Li, M Jiang, ... ACS Applied Materials & Interfaces 16 (5), 6068-6077, 2024 | 15 | 2024 |
| Ultrahigh Responsivity β-Ga2O3/BP Junction Field Effect Phototransistors for UV/IR Dual-Band Detection T Chen, J Zhang, X Zhang, C Chen, L Zhang, Y Hu, Y Ma, X Wei, X Zhou, ... IEEE Sensors Journal 23 (14), 15504-15511, 2023 | 11 | 2023 |
| Fabrication of Regular Hierarchical Structures with Superhydrophobic and High Adhesion Performances on a 304 Stainless Steel Surface via Picosecond Laser C Ma, M Kang, X Wang, N Li, W Hong, C Li, A Yang Journal of Bionic Engineering 16, 806-813, 2019 | 11 | 2019 |
| Highly reliable temperature sensor based on p-GaN/AlGaN/GaN hybrid anode diode with wide operation temperature from 73 K to 573 K A Yang, X Wei, W Shen, Y Hu, T Chen, H Wang, J Zhou, R Xing, X Zhang, ... Crystals 13 (4), 620, 2023 | 3 | 2023 |
| Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching Y Li, G Yu, H Wang, J Zhou, Z Wang, R Xing, S Lu, A Yang, B Zhang, ... Applied Physics Express 17 (1), 011004, 2023 | 2 | 2023 |
| Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency R Xing, H Wang, J Zhou, A Yang, Y Li, G Yu, Z Zeng, X Zhang, B Zhang Optical Engineering 62 (6), 065108-065108, 2023 | 2 | 2023 |
| Polarization properties in GaN double-channel HEMTs at mid-infrared frequencies R Xing, H Guo, G Yu, J Zhou, A Yang, S Dai, Z Zeng, X Zhang, B Zhang Plasmonics 19 (3), 1121-1130, 2024 | 1 | 2024 |
| High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing … B Guo, G Yu, L Zhang, J Zhou, Z Wang, R Xing, A Yang, Y Li, B Liu, ... Crystals 14 (3), 253, 2024 | 1 | 2024 |
| Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‑on‑Sapphire Trench Metal–Oxide–Semiconductor Field‑Effect Transistor J Zhou, A Yang, G Yu, R Xing, B Guo, C Hao, Y Li, B Liu, H Yue, J Jiang, ... Physica Status Solidi Rapid Research Letters 18 (11), 2400075, 2024 | | 2024 |
| Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by … Y Li, J Zhou, R Xing, S Lu, A Yang, B Guo, B Liu, Z Du, G Yu, Z Zeng, ... ACS Applied Electronic Materials 6 (1), 150-154, 2024 | | 2024 |
| Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate R Xing, P Zhang, H Guo, G Yu, J Zhou, A Yang, S Dai, Z Zeng, X Zhang, ... Plasmonics, 1-8, 2024 | | 2024 |
Zhongming Zeng在 sinano.ac.cn 的电子邮件经过验证
