| Methods for forming doped silicon oxide thin films N Takamure, A Fukazawa, H Fukuda, A Niskanen, S Haukka, R Nakano, ... US Patent 8,679,958, 2014 | 578 | 2014 |
| Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen A Fukazawa, N Takamure US Patent 8,329,599, 2012 | 515 | 2012 |
| Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond A Fukazawa, N Takamure US Patent App. 13/406,791, 2013 | 492 | 2013 |
| Method for forming dielectric film in trenches by PEALD using H-containing gas A Fukazawa, H Fukuda, N Takamure, M Zaitsu US Patent 9,455,138, 2016 | 481 | 2016 |
| Method for forming Si-containing film using two precursors by ALD N Tsuji, A Fukazawa, N Takamure, S Haukka, AJ Niskanen, HS Park US Patent 8,912,101, 2014 | 478 | 2014 |
| Method for forming Ti-containing film by PEALD using TDMAT or TDEAT N Takamure, T Okabe US Patent 9,556,516, 2017 | 457 | 2017 |
| Methods for forming doped silicon oxide thin films N Takamure, A Fukazawa, H Fukuda, A Niskanen, S Haukka, R Nakano, ... US Patent 9,153,441, 2015 | 428 | 2015 |
| Methods for forming doped silicon oxide thin films N Takamure, A Fukazawa, H Fukuda, A Niskanen, S Haukka, R Nakano, ... US Patent 9,564,314, 2017 | 402 | 2017 |
| Methods for forming doped silicon oxide thin films N Takamure, A Fukazawa, H Fukuda, A Niskanen, S Haukka, R Nakano, ... US Patent 9,368,352, 2016 | 400 | 2016 |
| Method for forming dielectric SiOCH film having chemical stability N Tsuji, K Matsushita, M Kato, N Takamure US Patent 7,807,566, 2010 | 395 | 2010 |
| Gas chromatography–mass spectrometry analyses of encapsulated stable perovskite solar cells L Shi, MP Bucknall, TL Young, M Zhang, L Hu, J Bing, DS Lee, J Kim, ... Science 368 (6497), eaba2412, 2020 | 350 | 2020 |
| Methods for forming doped silicon oxide thin films N Takamure, A Fukazawa, H Fukuda, A Niskanen, S Haukka, R Nakano, ... US Patent 9,875,893, 2018 | 348 | 2018 |
| Methods for forming doped silicon oxide thin films N Takamure, A Fukazawa, H Fukuda, A Niskanen, S Haukka, R Nakano, ... US Patent 10,147,600, 2018 | 346 | 2018 |
| Silicate glass-to-glass hermetic bonding for encapsulation of next-generation optoelectronics: A review L Granados, R Morena, N Takamure, T Suga, S Huang, DR McKenzie, ... Materials Today 47, 131-155, 2021 | 25 | 2021 |
| Electric field assisted ion exchange of silver in soda-lime glass: a study of ion depletion layers and interactions with potassium N Takamure, A Kondyurin, DR McKenzie Journal of Applied Physics 125 (17), 2019 | 19 | 2019 |
| Direct determination of total hemispherical emittance of perovskite and silicon solar cells L Granados, N Takamure, J Bing, S Huang, H Merhvarz, DR McKenzie, ... Cell Reports Physical Science 1 (1), 2020 | 10 | 2020 |
| Optimization of low-k UV curing: Effect of wave length on critical properties of the dielectric G Aksenov, P Verdonck, D Shamiryan, MR Baklanov, D De Roest, ... Materials Research Society Symposium Proceedings, 39-44, 2009 | 8 | 2009 |
| Film forming apparatus, and method of manufacturing semiconductor device R Nakano, N Takamure, H Arai US Patent 9,673,092, 2017 | 5 | 2017 |
| Thermodynamic interpretation of the Meyer-Neldel rule explains temperature dependence of ion diffusion in silicate glass N Takamure, X Sun, T Nagata, A Ho-Baillie, N Fukata, DR McKenzie Physical Review Letters 129 (17), 175901, 2022 | 4 | 2022 |
| Methods for forming doped silicon oxide thin films N Takamure, A Fukazawa, H Fukuda, A Niskanen, S Haukka, R Nakano, ... US Patent 10,510,530, 2019 | 3 | 2019 |
David R McKenzieProfessor, Materials Physics, University of Sydney在 Sydney.edu.au 的电子邮件经过验证
