| Hole-doped 2D InSe for spintronic applications K Iordanidou, M Houssa, J Kioseoglou, VV Afanas’ ev, A Stesmans, ... ACS Applied Nano Materials 1 (12), 6656-6665, 2018 | 46 | 2018 |
| Topological to trivial insulating phase transition in stanene M Houssa, B van den Broek, K Iordanidou, AKA Lu, G Pourtois, ... Nano Research 9, 774-778, 2016 | 44 | 2016 |
| Intrinsic point defects in buckled and puckered arsenene: a first-principles study K Iordanidou, J Kioseoglou, VV Afanas’Ev, A Stesmans, M Houssa Physical Chemistry Chemical Physics 19 (15), 9862-9871, 2017 | 42 | 2017 |
| Status of materials and device modelling for kesterite solar cells SN Hood, A Walsh, C Persson, K Iordanidou, D Huang, M Kumar, Z Jehl, ... Journal of Physics: Energy 1 (4), 042004, 2019 | 40 | 2019 |
| Silicene on non-metallic substrates: Recent theoretical and experimental advances E Scalise, K Iordanidou, VV Afanas’ ev, A Stesmans, M Houssa Nano Research 11, 1169-1182, 2018 | 35 | 2018 |
| Impact of point defects on the electronic and transport properties of silicene nanoribbons K Iordanidou, M Houssa, B van den Broek, G Pourtois, VV Afanas’Ev, ... Journal of Physics: Condensed Matter 28 (3), 035302, 2016 | 35 | 2016 |
| Functional silicene and stanene nanoribbons compared to graphene: electronic structure and transport B van den Broek, M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, ... 2D Materials 3 (1), 015001, 2016 | 30 | 2016 |
| Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions M Houssa, K Iordanidou, A Dabral, A Lu, G Pourtois, V Afanasiev, ... ACS Applied Nano Materials 2 (2), 760-766, 2019 | 27 | 2019 |
| Ferromagnetism and half-metallicity in two-dimensional monolayers induced by hole doping R Meng, M Houssa, K Iordanidou, G Pourtois, V Afanasiev, A Stesmans Physical Review Materials 4 (7), 074001, 2020 | 24 | 2020 |
| Ferromagnetism in two-dimensional hole-doped SnO M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, A Stesmans AIP Advances 8 (5), 2018 | 23 | 2018 |
| Point defects in MoS2: Comparison between first-principles simulations and electron spin resonance experiments M Houssa, K Iordanidou, G Pourtois, VV Afanas’ev, A Stesmans Applied Surface Science 416, 853-857, 2017 | 19 | 2017 |
| Contact resistance at graphene/MoS2 lateral heterostructures M Houssa, K Iordanidou, A Dabral, A Lu, R Meng, G Pourtois, ... Applied Physics Letters 114 (16), 2019 | 16 | 2019 |
| Two-dimensional gallium and indium oxides from global structure searching: Ferromagnetism and half metallicity via hole doping R Meng, M Houssa, K Iordanidou, G Pourtois, V Afanasiev, A Stesmans Journal of Applied Physics 128 (3), 2020 | 14 | 2020 |
| Electric field and strain tuning of 2D semiconductor van der Waals heterostructures for tunnel field-effect transistors K Iordanidou, R Mitra, N Shetty, S Lara-Avila, S Dash, S Kubatkin, J Wiktor ACS Applied Materials & Interfaces 15 (1), 1762-1771, 2022 | 13 | 2022 |
| Impact of point defects and oxidation on the electronic properties of HfS2 monolayers K Iordanidou, M Houssa, G Pourtois, VV Afanas' ev, A Stesmans ECS Journal of Solid State Science and Technology 5 (11), Q3054, 2016 | 13 | 2016 |
| Two-dimensional van der Waals heterostructures for tunnel-FET applications K Iordanidou, J Wiktor Physical Review Materials 6 (8), 084001, 2022 | 12 | 2022 |
| Oxygen and hydroxyl adsorption on MS2 (M = Mo, W, Hf) monolayers: a first‐principles molecular dynamics study K Iordanidou, M Houssa, G Pourtois, VV Afanas' ev, A Stesmans physica status solidi (RRL)–Rapid Research Letters 10 (11), 787-791, 2016 | 12 | 2016 |
| Doping-induced ferromagnetism in InSe and SnO monolayers M Houssa, R Meng, K Iordanidou, G Pourtois, VV Afanas’ ev, A Stesmans Journal of Computational Electronics 20, 88-94, 2021 | 10 | 2021 |
| Hole-doping induced ferromagnetism in monolayer SnO: A first-principles study M Houssa, K Iordanidou, G Pourtois, VV Afanas' ev, A Stesmans ECS Transactions 80 (1), 339, 2017 | 9 | 2017 |
| Carrier-mediated ferromagnetism in two-dimensional PtS 2 K Iordanidou, M Houssa, C Persson RSC advances 10 (2), 952-957, 2020 | 7 | 2020 |
