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Muhammad Elmessary
Muhammad Elmessary
在 mans.edu.eg 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ...
IEEE Journal of the Electron Devices Society 6, 332-340, 2018
2132018
Cost of managing patients with venous leg ulcers
CJ Phillips, I Humphreys, D Thayer, M Elmessary, H Collins, C Roberts, ...
International wound journal 17 (4), 1074-1082, 2020
772020
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
462016
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2017
442017
Solitary solution and energy for the Kadomstev–Petviashvili equation in two temperatures charged dusty grains
EK El-Shewy, MI Abo el Maaty, HG Abdelwahed, MA Elmessary
Astrophysics and Space Science 332, 179-186, 2011
412011
Metal grain granularity study on a gate-all-around nanowire FET
D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ...
IEEE Transactions on Electron Devices 64 (12), 5263-5269, 2017
292017
3-D finite element Monte Carlo simulations of scaled Si SOI FinFET with different cross sections
D Nagy, MA Elmessary, M Aldegunde, R Valin, A Martinez, J Lindberg, ...
IEEE Transactions on Nanotechnology 14 (1), 93-100, 2014
242014
Dust Acoustic Solitary Waves in Saturn F-ring's Region
EK El-Shewy, MIA El Maaty, HG Abdelwahed, MA Elmessary
Communications in Theoretical Physics 55 (1), 143, 2011
232011
Anisotropic quantum corrections for 3-D finite-element Monte Carlo simulations of nanoscale multigate transistors
MA Elmessary, D Nagy, M Aldegunde, J Lindberg, WG Dettmer, D Períc, ...
IEEE Transactions on Electron Devices 63 (3), 933-939, 2016
192016
Dust acoustic shock waves in two temperatures charged dusty grains
EK El-Shewy, HG Abdelwahed, MA Elmessary
Physics of Plasmas 18 (11), 2011
132011
Drift-diffusion versus Monte Carlo simulated ON-current variability in nanowire FETs
D Nagy, G Indalecio, AJ Garcia-Loureiro, G Espineira, MA Elmessary, ...
IEEE Access 7, 12790-12797, 2019
112019
Spatial sensitivity of silicon GAA nanowire FETs under line edge roughness variations
G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, N Seoane
IEEE Journal of the Electron Devices Society 6, 601-610, 2018
112018
Simulation study of scaled In0. 53Ga0. 47As and Si FinFETs for sub-16 nm technology nodes
N Seoane, M Aldegunde, D Nagy, MA Elmessary, G Indalecio, ...
Semiconductor Science and Technology 31 (7), 075005, 2016
102016
Propagation of dust acoustic solitary waves in Saturn f-ring’s region
MIA el Maaty, EK El-Shewy, HG Abdelwahed, MA Elmessary
Electronic Journal of Theoretical Physics 7 (24), 151-162, 2010
62010
Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, AJ García-Loureiro, K Kalna
2017 47th European Solid-State Device Research Conference (ESSDERC), 184-187, 2017
22017
Improved dust acoustic solitary waves in two temperature dust fluids
EK El-Shewy, HG Abdelwahed, MI Abo el Maaty, MA Elmessary
Applications and Applied Mathematics: An International Journal (AAM) 5 (1), 3, 2010
22010
Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2nm Nodes
MGK Alabdullah, MA Elmessary, D Nagy, N Seoane, AJ García-Loureiro, ...
IEEE Journal of the Electron Devices Society, 2024
12024
Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness
D Nagy, M Aldegunde, MA Elmessary, AJ Garcia-Loureiro, N Seoane, ...
Journal of Physics: Condensed Matter 30 (14), 144006, 2018
12018
3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs
MA Elmessary, D Nagy, M Aldegunde, AJ Garcia-Loureiro, K Kalna
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
12016
Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs
D Nagy, MA Elmessary, M Aldegunde, J Lindberg, AJ García-Loureiro, ...
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
12015
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