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Wenbo Li
Wenbo Li
在 buckeyemail.osu.edu 的电子邮件经过验证
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引用次数
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Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
Y Zhang, Z Chen, W Li, H Lee, MR Karim, AR Arehart, SA Ringel, S Rajan, ...
Journal of Applied Physics 127 (21), 2020
332020
Metalorganic chemical vapor deposition gallium nitride with fast growth rate for vertical power device applications
Y Zhang, Z Chen, W Li, AR Arehart, SA Ringel, H Zhao
physica status solidi (a) 218 (6), 2000469, 2021
172021
Trap characterization of high-growth-rate laser-assisted MOCVD GaN
W Li, Y Zhang, Z Chen, H Zhao, SA Ringel, AR Arehart
Applied Physics Letters 123 (11), 2023
12023
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