关注
Shahram Ghanad-Tavakoli
Shahram Ghanad-Tavakoli
ASM International
在 mcmaster.ca 的电子邮件经过验证
标题
引用次数
引用次数
年份
Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy
SH Vajargah, M Couillard, K Cui, SG Tavakoli, B Robinson, RN Kleiman, ...
Applied Physics Letters 98 (8), 2011
642011
Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer
SH Vajargah, S Ghanad-Tavakoli, JS Preston, RN Kleiman, GA Botton
Journal of Applied Physics 114 (11), 2013
412013
The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films
GA Devenyi, SY Woo, S Ghanad-Tavakoli, RA Hughes, RN Kleiman, ...
Journal of Applied Physics 110 (12), 2011
302011
Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy
S Hosseini Vajargah, SY Woo, S Ghanad-Tavakoli, RN Kleiman, ...
Journal of Applied Physics 112 (9), 2012
212012
Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy
SY Woo, S Hosseini Vajargah, S Ghanad-Tavakoli, RN Kleiman, ...
Journal of Applied Physics 112 (7), 2012
192012
Silicon-based multi-junction solar cell with 19.7% efficiency at 1-sun using areal current matching for 2-terminal operation
J Yang, D Cheong, J Rideout, S Tavakoli, R Kleiman
2011 37th IEEE Photovoltaic Specialists Conference, 001019-001024, 2011
172011
Sampling optimization of Moiré geometrical phase analysis for strain characterization in scanning transmission electron microscopy
A Pofelski, S Ghanad-Tavakoli, DA Thompson, GA Botton
Ultramicroscopy 209, 112858, 2020
152020
Experimental characterization and theoretical modeling of the strain effect on the evolution and interband transitions of InAs quantum dots grown on InxGa1− xAs (0.0⩽ x⩽ 0.3 …
S Ghanad-Tavakoli, MA Naser, DA Thompson, M Jamal Deen
Journal of Applied Physics 106 (6), 2009
152009
Tilted epitaxy on (211)-oriented substrates
SY Woo, GA Devenyi, S Ghanad-Tavakoli, RN Kleiman, JS Preston, ...
Applied Physics Letters 102 (13), 2013
142013
Tilt generation in step-graded InxGa1− xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer
S Ghanad Tavakoli, O Hulko, DA Thompson
Journal of Applied Physics 103 (10), 2008
11*2008
Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy
S Hosseini Vajargah, S Ghanad-Tavakoli, JS Preston, GA Botton, ...
Journal of Applied Physics 112 (9), 2012
82012
Antimony as a proper candidate for low-temperature solid phase epitaxially activated n+/p junctions
SG Tavakoli, S Baek, HS Chang, DW Moon, H Hwang
Electrochemical and solid-state letters 7 (10), G216, 2004
62004
Assessment of the strain depth sensitivity of moire sampling scanning transmission electron microscopy geometrical phase analysis through a comparison with dark-field electron …
A Pofelski, V Whabi, S Ghanad-Tavakoli, G Botton
Ultramicroscopy 223, 113225, 2021
52021
Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors
SG Tavakoli, S Baek, HS Chang, DW Moon, H Hwang
Applied Physics Letters 86 (3), 2005
52005
Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon
SG Tavakoli, S Baek, H Hwang
Materials Science and Engineering: B 114, 376-380, 2004
42004
Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells
JP Landesman, N Isik-Goktas, RR LaPierre, C Levallois, ...
Journal of Physics D: Applied Physics 54 (44), 445106, 2021
12021
Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy
VS Hosseini
12013
Aberration-Corrected TEM Study of Defects in III-V Films Grown on Si
SH Vajargah, M Couillard, Y Shao, S Tavakoli, R Kleiman, J Preston, ...
Microscopy and Microanalysis 16 (S2), 1338-1339, 2010
12010
Spatially–Resolved Luminescence Properties of Etched Quantum Well Microstructures
JP Landesman, E Diak, R Lapierre, C Levallois, S Ghanad-Tavakoli
245th Electrochemical Society meeting, 2024
2024
(Invited) Low-Temperature Spatially-Resolved Luminescence Spectroscopy of Microstructures with Strained III-V Quantum Wells
JP Landesman, N Isik Goktas, R LaPierre, S Ghanad-Tavakoli, E Pargon, ...
Electrochemical Society Meeting Abstracts 241, 1090-1090, 2022
2022
系统目前无法执行此操作,请稍后再试。
文章 1–20