Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy SH Vajargah, M Couillard, K Cui, SG Tavakoli, B Robinson, RN Kleiman, ... Applied Physics Letters 98 (8), 2011 | 64 | 2011 |
Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer SH Vajargah, S Ghanad-Tavakoli, JS Preston, RN Kleiman, GA Botton Journal of Applied Physics 114 (11), 2013 | 41 | 2013 |
The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films GA Devenyi, SY Woo, S Ghanad-Tavakoli, RA Hughes, RN Kleiman, ... Journal of Applied Physics 110 (12), 2011 | 30 | 2011 |
Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy S Hosseini Vajargah, SY Woo, S Ghanad-Tavakoli, RN Kleiman, ... Journal of Applied Physics 112 (9), 2012 | 21 | 2012 |
Direct observation of anti-phase boundaries in heteroepitaxy of GaSb thin films grown on Si (001) by transmission electron microscopy SY Woo, S Hosseini Vajargah, S Ghanad-Tavakoli, RN Kleiman, ... Journal of Applied Physics 112 (7), 2012 | 19 | 2012 |
Silicon-based multi-junction solar cell with 19.7% efficiency at 1-sun using areal current matching for 2-terminal operation J Yang, D Cheong, J Rideout, S Tavakoli, R Kleiman 2011 37th IEEE Photovoltaic Specialists Conference, 001019-001024, 2011 | 17 | 2011 |
Sampling optimization of Moiré geometrical phase analysis for strain characterization in scanning transmission electron microscopy A Pofelski, S Ghanad-Tavakoli, DA Thompson, GA Botton Ultramicroscopy 209, 112858, 2020 | 15 | 2020 |
Experimental characterization and theoretical modeling of the strain effect on the evolution and interband transitions of InAs quantum dots grown on InxGa1− xAs (0.0⩽ x⩽ 0.3 … S Ghanad-Tavakoli, MA Naser, DA Thompson, M Jamal Deen Journal of Applied Physics 106 (6), 2009 | 15 | 2009 |
Tilted epitaxy on (211)-oriented substrates SY Woo, GA Devenyi, S Ghanad-Tavakoli, RN Kleiman, JS Preston, ... Applied Physics Letters 102 (13), 2013 | 14 | 2013 |
Tilt generation in step-graded InxGa1− xAs metamorphic pseudosubstrate on a singular GaAs substrate using a low-temperature grown InGaP interlayer S Ghanad Tavakoli, O Hulko, DA Thompson Journal of Applied Physics 103 (10), 2008 | 11* | 2008 |
Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy S Hosseini Vajargah, S Ghanad-Tavakoli, JS Preston, GA Botton, ... Journal of Applied Physics 112 (9), 2012 | 8 | 2012 |
Antimony as a proper candidate for low-temperature solid phase epitaxially activated n+/p junctions SG Tavakoli, S Baek, HS Chang, DW Moon, H Hwang Electrochemical and solid-state letters 7 (10), G216, 2004 | 6 | 2004 |
Assessment of the strain depth sensitivity of moire sampling scanning transmission electron microscopy geometrical phase analysis through a comparison with dark-field electron … A Pofelski, V Whabi, S Ghanad-Tavakoli, G Botton Ultramicroscopy 223, 113225, 2021 | 5 | 2021 |
Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors SG Tavakoli, S Baek, HS Chang, DW Moon, H Hwang Applied Physics Letters 86 (3), 2005 | 5 | 2005 |
Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon SG Tavakoli, S Baek, H Hwang Materials Science and Engineering: B 114, 376-380, 2004 | 4 | 2004 |
Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells JP Landesman, N Isik-Goktas, RR LaPierre, C Levallois, ... Journal of Physics D: Applied Physics 54 (44), 445106, 2021 | 1 | 2021 |
Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy VS Hosseini | 1 | 2013 |
Aberration-Corrected TEM Study of Defects in III-V Films Grown on Si SH Vajargah, M Couillard, Y Shao, S Tavakoli, R Kleiman, J Preston, ... Microscopy and Microanalysis 16 (S2), 1338-1339, 2010 | 1 | 2010 |
Spatially–Resolved Luminescence Properties of Etched Quantum Well Microstructures JP Landesman, E Diak, R Lapierre, C Levallois, S Ghanad-Tavakoli 245th Electrochemical Society meeting, 2024 | | 2024 |
(Invited) Low-Temperature Spatially-Resolved Luminescence Spectroscopy of Microstructures with Strained III-V Quantum Wells JP Landesman, N Isik Goktas, R LaPierre, S Ghanad-Tavakoli, E Pargon, ... Electrochemical Society Meeting Abstracts 241, 1090-1090, 2022 | | 2022 |