| Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack MH Cho, CH Choi, HJ Seul, HC Cho, JK Jeong ACS Applied Materials & Interfaces 13 (14), 16628-16640, 2021 | 104 | 2021 |
| Comparative study on performance of IGZO transistors with sputtered and atomic layer deposited channel layer MH Cho, H Seol, A Song, S Choi, Y Song, PS Yun, KB Chung, JU Bae, ... IEEE Transactions on Electron Devices 66 (4), 1783-1788, 2019 | 93 | 2019 |
| Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition MH Cho, MJ Kim, H Seul, PS Yun, JU Bae, KS Park, JK Jeong Journal of Information Display, 2018 | 55 | 2018 |
| High-performance thin-film transistors with an atomic-layer-deposited indium gallium oxide channel: A cation combinatorial approach HJ Yang, HJ Seul, MJ Kim, Y Kim, HC Cho, MH Cho, YH Song, H Yang, ... ACS applied materials & interfaces 12 (47), 52937-52951, 2020 | 54 | 2020 |
| High-performance amorphous indium gallium zinc oxide thin-film transistors fabricated by atomic layer deposition MH Cho, H Seol, H Yang, PS Yun, JU Bae, KS Park, JK Jeong IEEE Electron Device Letters 39 (5), 688-691, 2018 | 54 | 2018 |
| Atomic layer deposition process-enabled carrier mobility boosting in field-effect transistors through a nanoscale ZnO/IGO heterojunction HJ Seul, MJ Kim, HJ Yang, MH Cho, MH Cho, WB Song, JK Jeong ACS applied materials & interfaces 12 (30), 33887-33898, 2020 | 53 | 2020 |
| Comparative study of atomic layer deposited indium-based oxide transistors with a Fermi energy level-engineered heterojunction structure channel through a cation combinatorial … MH Cho, CH Choi, JK Jeong ACS Applied Materials & Interfaces 14 (16), 18646-18661, 2022 | 28 | 2022 |
| Improvement in carrier mobility through band-gap engineering in atomic-layer-deposited In-Ga-Zn-O stacks HJ Seul, JH Cho, JS Hur, MH Cho, MH Cho, MT Ryu, JK Jeong Journal of Alloys and Compounds 903, 163876, 2022 | 17 | 2022 |
| Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications MH Cho, CH Choi, JK Jeong Journal of the Society for Information Display 30 (3), 175-197, 2022 | 16 | 2022 |
| High-performance indium-based oxide transistors with multiple channels through nanolaminate structure fabricated by plasma-enhanced atomic layer deposition MH Cho, CH Choi, MJ Kim, JS Hur, T Kim, JK Jeong ACS Applied Materials & Interfaces 15 (15), 19137-19151, 2023 | 10 | 2023 |
| P‐13: High Performance a‐IGZO Thin‐Film Transistors Grown by Atomic Layer Deposition: Cation Combinatorial Approach MH Cho, H Seol, N On, TK Kim, PS Yun, JU Bae, KS Park, JK Jeong SID Symposium Digest of Technical Papers 50 (1), 1259-1262, 2019 | 4 | 2019 |
| 15.2: Invited Paper: Atomic Layer Deposited Oxide Semiconductor Enabling High Mobility and Low Driving Voltage in TFTs MH Cho, HJ Seul, JK Jeong SID Symposium Digest of Technical Papers 52, 206-209, 2021 | 1 | 2021 |
Jae Kyeong JeongHanyang Univ.在 hanyang.ac.kr 的电子邮件经过验证
Jae Kyeong JeongHanyang Univ.在 hanyang.ac.kr 的电子邮件经过验证
Minjae KimHanyang Univ.在 hanyang.ac.kr 的电子邮件经过验证
Cheol Hee ChoiSamsung Electronics在 samsung.com 的电子邮件经过验证
Taikyu KimKorea Institute of Science and Technology在 kist.re.kr 的电子邮件经过验证