| Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu Optics express 19 (104), A991-A1007, 2011 | 626 | 2011 |
| MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019 | 291 | 2019 |
| Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 2018 | 262 | 2018 |
| Self-consistent analysis of strain-compensated InGaN–AlGaN quantum wells for lasers and light-emitting diodes H Zhao, RA Arif, YK Ee, N Tansu IEEE Journal of Quantum Electronics 45 (1), 66-78, 2008 | 257 | 2008 |
| Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition S Rafique, L Han, MJ Tadjer, JA Freitas, NA Mahadik, H Zhao Applied Physics Letters 108 (18), 2016 | 235 | 2016 |
| Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes H Zhao, G Liu, RA Arif, N Tansu Solid-State Electronics 54 (10), 1119-1124, 2010 | 232 | 2010 |
| Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers J Zhang, H Zhao, N Tansu Applied Physics Letters 97 (11), 2010 | 225 | 2010 |
| Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes H Zhao, G Liu, J Zhang, RA Arif, N Tansu Journal of Display Technology 9 (4), 212-225, 2013 | 207 | 2013 |
| Analysis of InGaN-delta-InN quantum wells for light-emitting diodes H Zhao, G Liu, N Tansu Applied Physics Letters 97 (13), 2010 | 202 | 2010 |
| Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 2009 | 197 | 2009 |
| III-nitride photonics N Tansu, H Zhao, G Liu, XH Li, J Zhang, H Tong, YK Ee IEEE Photonics Journal 2 (2), 241-248, 2010 | 178 | 2010 |
| Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes RA Arif, H Zhao, YK Ee, N Tansu IEEE Journal of Quantum Electronics 44 (6), 573-580, 2008 | 162 | 2008 |
| Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018 | 156 | 2018 |
| Design analysis of staggered InGaN quantum wells light-emitting diodes at 500–540 nm H Zhao, RA Arif, N Tansu IEEE Journal of selected topics in quantum electronics 15 (4), 1104-1114, 2009 | 155 | 2009 |
| Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses YK Ee, P Kumnorkaew, RA Arif, H Tong, H Zhao, JF Gilchrist, N Tansu IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1218-1225, 2009 | 152 | 2009 |
| MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019 | 149 | 2019 |
| Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 2016 | 149 | 2016 |
| Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018 | 147 | 2018 |
| Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes J Zhang, H Zhao, N Tansu Applied Physics Letters 98 (17), 2011 | 140 | 2011 |
| Type-II InGaN-GaNAs quantum wells for lasers applications RA Arif, H Zhao, N Tansu Applied Physics Letters 92 (1), 2008 | 139 | 2008 |
Nelson TansuHead of School & Professor, School of Electrical & Mechanical Engineering [EEE, ME, & BME]在 adelaide.edu.au 的电子邮件经过验证
