| Demonstration of blue semipolar (202 1) GaN-based vertical-cavity surface-emitting lasers JA Kearns, J Back, DA Cohen, SP DenBaars, S Nakamura Optics express 27 (17), 23707-23713, 2019 | 30 | 2019 |
| Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments MS Wong, J Back, D Hwang, C Lee, J Wang, S Gandrothula, T Margalith, ... Applied Physics Express 14 (8), 086502, 2021 | 22 | 2021 |
| Inhomogeneous Current Injection and Filamentary Lasing of Semipolar Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions JA Kearns, J Back, NC Palmquist, DA Cohen, SP DenBaars, S Nakamura physica status solidi (a) 217 (7), 1900718, 2020 | 22 | 2020 |
| Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs AJ Mughal, EC Young, AI Alhassan, J Back, S Nakamura, JS Speck, ... Applied Physics Express 10 (12), 121006, 2017 | 14 | 2017 |
| Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length J Back, MS Wong, J Kearns, SP DenBaars, C Weisbuch, S Nakamura Optics Express 28 (20), 29991-30003, 2020 | 13 | 2020 |
| Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package MS Wong, SH Oh, J Back, C Lee, JS Speck, S Nakamura, SP DenBaars Japanese Journal of Applied Physics 60 (2), 020905, 2021 | 6 | 2021 |
| Long-cavity M-plane GaN-based vertical-cavity surface-emitting lasers with a topside monolithic curved mirror NC Palmquist, R Anderson, JA Kearns, J Back, E Trageser, S Gee, ... Photonics 10 (6), 646, 2023 | 5 | 2023 |
| High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity J Back, MS Wong, SP DenBaars, C Weisbuch, S Nakamura Applied Physics Letters 118 (3), 2021 | 4 | 2021 |
| Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR NC Palmquist, R Anderson, JA Kearns, J Back, E Trageser, S Gee, ... Gallium Nitride Materials and Devices XVIII 12421, 127-135, 2023 | 3 | 2023 |
| Blue semipolar InGaN microcavity light-emitting diode with varying cavity lengths from 113 to 290 nm J Back, V Rienzi, MS Wong, H Li, SP DenBaars, C Weisbuch, ... Applied Physics Express 14 (4), 042003, 2021 | 3 | 2021 |
| Blue semipolar III-nitride vertical-cavity surface-emitting lasers JA Kearns, NC Palmquist, J Back, SG Lee, DA Cohen, SP DenBaars, ... Gallium Nitride Materials and Devices XV 11280, 45-53, 2020 | 2 | 2020 |
| Iii-nitride-based vertical cavity surface emitting laser (vcsel) configurations J Kearns, DA Cohen, J Back, N Palmquist, T Margalith, SP DenBaars, ... US Patent App. 17/613,659, 2022 | 1 | 2022 |
| High-efficiency violet and blue InGaN microcavity light-emitting diodes J Back University of California, Santa Barbara, 2021 | 1 | 2021 |
| Progress in semipolar GaN-based VCSELs JA Kearns, J Back, NC Palmquist, DA Cohen, SP DenBaars The 9th Laser Display and Lighting Conference 11520, 1152001-10, 0 | | |
