Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator R Sarma, D Saikia, P Saikia, PK Saikia, B Baishya Brazilian Journal of Physics 40, 357-360, 2010 | 33 | 2010 |
Low-CostBilayer Electrode for Pentacene-Based OTFTs R Sarma, D Saikia IEEE Electron Device Letters 32 (2), 209-211, 2010 | 21 | 2010 |
Organic light-emitting diodes with a perylene interlayer between the electrode–organic interface D Saikia, R Sarma Journal of Electronic Materials 47 (1), 737-743, 2018 | 17 | 2018 |
Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics S Khound, R Sarma Applied Physics A 124 (1), 41, 2018 | 15 | 2018 |
Pentacene thin film transistors using La2O3 as gate insulator R Sarma, D Saikia, K Konwar, B Baishya Indian Journal of Physics 84 (5), 547-552, 2010 | 13 | 2010 |
Improved performance of organic light-emitting diode with vanadium pentoxide layer on the FTO surface DSR SARMA Pramana – J. Phys. 88 (83), 1-6, 2017 | 11 | 2017 |
Hybrid La2O3-cPVP dielectric for organic thin film transistor applications S Khound, JK Sarmah, R Sarma ECS Journal of Solid State Science and Technology 11 (1), 013007, 2022 | 10 | 2022 |
Top-Contact Pentacene-Based Organic Thin Film Transistor (OTFT) with N,N′-Bis(3-Methyl Phenyl)-N,N′-Diphenyl Benzidine (TPD)/Au Bilayer Source-Drain … T Borthakur, R Sarma Journal of Electronic Materials 47 (1), 627-632, 2018 | 10 | 2018 |
Study of tetracene thin film transistors using La2O3 as gate insulator R Sarma, D Saikia CSIR, 2009 | 9 | 2009 |
High performance organic thin film transistors using pentacene-based rare-earth oxide bilayer gate dielectric S Khound, R Sarma Journal of Electronic Materials 48, 4491-4497, 2019 | 7 | 2019 |
Performance improvement of organic light emitting diode using 4,4 -N,N -dicarbazole-biphenyl (CBP) layer over fluorine-doped tin oxide (FTO) surface with doped light emitting … RS DHRUBAJYOTI SAIKIA Pramana – J. Phys. 91 (65), 3-9, 2018 | 7* | 2018 |
A comparative study of the influence of nickel oxide layer on the FTO surface of organic light emitting diode D Saikia, R Sarma Indian Journal of Physics 92 (3), 307-313, 2018 | 7 | 2018 |
Characterization of organic light-emitting diode using a rubrene interlayer between electrode and hole transport layer D Saikia, R Sarma Bulletin of Materials Science 43, 1-8, 2020 | 6 | 2020 |
Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors T Borthakur, R Sarma Indian Journal of Physics 91 (5), 563-567, 2017 | 6 | 2017 |
Performance enhancement of top contact pentacene-based organic thin-film transistor (OTFT) using perylene interlayer between organic/electrode interface T Borthakur, R Sarma Applied Physics A 123 (3), 207, 2017 | 6 | 2017 |
Low threshold voltage pentacene OTFTs with La2 O3 gate insulating layer using TSD PK Saikia, UJ Mahanta, P Saikia, B Baishya, R Sarma, D Saikia Chiang Mai J. Sci. 2012; 39(2) : 263-269 39 (2), 263-269, 2012 | 6 | 2012 |
Top-Contact Pentacene-Based Organic Thin Film Transistor with a Rubrene Layer in between Pentacene-Electrode Interface T Borthakur, R Sarma ECS Journal of Solid State Science and Technology 11 (4), 045005, 2022 | 4 | 2022 |
Fabrication of organic light-emitting diode using molybdenum trioxide interlayer between electrode and organic interface DSR Sarma Bulletin of Materials Science 41 (95), 1-7, 2018 | 4 | 2018 |
A comparative study of OLED using various thickness of electron transport layer D Saikia, R Sarma Indian J. Sci. Res 13 (1), 99-103, 2017 | 3 | 2017 |
Fabrication and Characterization of Organic Light Emitting Diode Using FTO/Pentacene as Bilayer Anode D Saikia, R Sarma Mater. Sci. Ind. J 14, 103, 2016 | 3 | 2016 |