| Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence W Goes, Y Wimmer, AM El-Sayed, G Rzepa, M Jech, AL Shluger, ... Microelectronics Reliability 87, 286-320, 2018 | 130 | 2018 |
| Nature of intrinsic and extrinsic electron trapping in SiO AM El-Sayed, MB Watkins, VV Afanas' ev, AL Shluger Physical Review B 89 (12), 125201, 2014 | 125 | 2014 |
| On the microscopic structure of hole traps in pMOSFETs T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ... 2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014 | 116 | 2014 |
| Hydrogen-induced rupture of strained Si─ O bonds in amorphous silicon dioxide AM El-Sayed, MB Watkins, T Grasser, VV Afanas’ ev, AL Shluger Physical review letters 114 (11), 115503, 2015 | 105 | 2015 |
| Theoretical models of hydrogen-induced defects in amorphous silicon dioxide AM El-Sayed, Y Wimmer, W Goes, T Grasser, VV Afanas' ev, AL Shluger Physical Review B 92 (1), 014107, 2015 | 88 | 2015 |
| Intrinsic charge trapping in amorphous oxide films: status and challenges J Strand, M Kaviani, D Gao, AM El-Sayed, VV Afanas’ ev, AL Shluger Journal of Physics: Condensed Matter 30 (23), 233001, 2018 | 82 | 2018 |
| Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices Y Wimmer, AM El-Sayed, W Gös, T Grasser, AL Shluger Proceedings of the Royal Society A: Mathematical, Physical and Engineering …, 2016 | 80 | 2016 |
| A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection DZ Gao, AM El-Sayed, AL Shluger Nanotechnology 27 (50), 505207, 2016 | 73 | 2016 |
| Gate-sided hydrogen release as the origin of" permanent" NBTI degradation: From single defects to lifetimes T Grasser, M Waltl, Y Wimmer, W Goes, R Kosik, G Rzepa, H Reisinger, ... 2015 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2015 | 58 | 2015 |
| Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations AM El-Sayed, MB Watkins, AL Shluger, VV Afanas’ev Microelectronic engineering 109, 68-71, 2013 | 57 | 2013 |
| On the volatility of oxide defects: Activation, deactivation, and transformation T Grasser, M Waltl, W Goes, Y Wimmer, AM El-Sayed, AL Shluger, ... 2015 IEEE International Reliability Physics Symposium, 5A. 3.1-5A. 3.8, 2015 | 48 | 2015 |
| treatment of silicon-hydrogen bond rupture at interfaces M Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser Physical Review B 100 (19), 195302, 2019 | 42 | 2019 |
| Effect of electric field on migration of defects in oxides: Vacancies and interstitials in bulk MgO AM El-Sayed, MB Watkins, T Grasser, AL Shluger Physical Review B 98 (6), 064102, 2018 | 38 | 2018 |
| The “permanent” component of NBTI revisited: Saturation, degradation-reversal, and annealing T Grasser, M Waltl, G Rzepa, W Goes, Y Wimmer, AM El-Sayed, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 5A-2-1-5A-2-8, 2016 | 37 | 2016 |
| Optical signatures of intrinsic electron localization in amorphous SiO2 AM El-Sayed, K Tanimura, AL Shluger Journal of Physics: Condensed Matter 27 (26), 265501, 2015 | 25 | 2015 |
| A computational study of Si–H bonds as precursors for neutral E′ centres in amorphous silica and at the Si/SiO2 interface S Ling, AM El-Sayed, F Lopez-Gejo, MB Watkins, VV Afanas’ev, ... Microelectronic engineering 109, 310-313, 2013 | 24 | 2013 |
| Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ... Microelectronics Reliability 139, 114801, 2022 | 17 | 2022 |
| Hole trapping at hydrogenic defects in amorphous silicon dioxide AM El-Sayed, MB Watkins, T Grasser, VV Afanas’ev, AL Shluger Microelectronic Engineering 147, 141-144, 2015 | 16 | 2015 |
| Atomistic modeling of oxide defects D Waldhoer, AMB El-Sayed, Y Wimmer, M Waltl, T Grasser Noise in Nanoscale Semiconductor Devices, 609-648, 2020 | 14 | 2020 |
| Single-versus multi-step trap assisted tunneling currents—Part II: The role of polarons C Schleich, D Waldhör, AM El-Sayed, K Tselios, B Kaczer, T Grasser, ... IEEE Transactions on Electron Devices 69 (8), 4486-4493, 2022 | 11 | 2022 |
